High-Responsivity Si Photodiodes at 1060 nm in Standard CMOS Technology

Guo, Xia; Liu, Qiaoli; Zhou, Huiyang; Luan, Xinxin; Li, Chong; Hu, Zonghai; He, Xiaoying

doi:10.1109/led.2017.2787147

Cited by 22 publications

(5 citation statements)

References 18 publications

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“…The PD based on the (001) plane exhibits an ultrahigh EQE of 37 719.6%, an R of 139.6 A W −1 , and a D * of 1.89 × 10 15 Jones, which is two orders of magnitude higher than commercial Si PDs. [ 256 ] Furthermore, the anisotropic optoelectronic properties of the 2D MHP are demonstrated. The photocurrent of PDs on the in‐plane (001) planes is more than 50 times higher than their counterparts on the out‐of‐plane (010) planes of the 2D (PEA) 2 PbI 4 due to the large anisotropy between the in‐plane and out‐of‐plane electrical conductivity, indicating that the organic cation spacer significantly affects the performance of PDs.…”

Section: Low‐dimensional Mhp Pdsmentioning

confidence: 99%

Low‐Dimensional Metal Halide Perovskite Photodetectors

et al. 2020

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Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record‐breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high‐performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low‐dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low‐dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low‐dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low‐dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low‐dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low‐dimensional MHP‐based PDs in the future.

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Section: Low‐dimensional Mhp Pdsmentioning

confidence: 99%

Low‐Dimensional Metal Halide Perovskite Photodetectors

et al. 2020

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“…The effect of light on the ESDG-TFET-based photodetector is examined by the various optical parameters, such as sensitivity [28,29], SNR [11], responsivity (R) [30,31], quantum efficiency (η), NEP, and detectivity. The photon absorption and electron emission rates primarily depend upon the various material properties.…”

Section: Resultsmentioning

confidence: 99%

Optical FOMs of extended-source DG–TFET photodetector in the visible range of the spectrum

Tiwari

Chonzom²,

Saha³

2023

Semicond. Sci. Technol.

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In this paper, the optical characteristics of Extended Source Double Gate Tunnel Field Effect Transistor (ESDG-TFET) based photo detector is studied in the visible range of spectrum for wavelength (300-700) nm. The optical characteristics are examined at three specific wavelength = 300, 500, and 700 nm with an Intensity of 0.7W/cm2. The optical behavior of photosensor like absorption rate, generation rate, energy band profiles, transfer characteristics, sensitivity (Sn), quantum efficiency (), signal to noise ratio (SNR), and Detectivity are extracted according to the incident wavelength of light. Results reveal that ESDG-TFET based photosensor exhibits the better optical characteristics at 300 nm compared to 500 and 700 nm. It is found that proposed photosensor provides sensitivity, SNR, and responsivity in the order of 91.2, 79 (dB), and 0.74 (A/Watt), respectively at = 300 nm. Due to high incident optical energy (Eg) at 300 nm, the absorption and emission rate of this photosensor are significantly large and consequently, it reports better optical characteristics. Finally, a comparative study of proposed TFET based photosensor with photosensor cited in literature are summarized in tabular form. A comparison study in terms of spectral sensitivity between single gate and double gate ESDG-TFET is reported. Moreover, an inverter circuit based on ESDG-TFET is designed and the corresponding transient analysis are highlighted under both dark and light states.

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“…1,2 Over the past few years, the performance of perovskite nanowire PDs has improved and is now equivalent to or even higher than that of standard commercial silicon photodiodes. [3][4][5][6][7][8][9][10][11] Despite the significant improvements in device performance, perovskite nanowire PDs still have many limitations that need to be addressed to enable their commercialization. It is widely acknowledged that the poor long-term stability of these PDs is the biggest challenge limiting their commercial application.…”

Section: Introductionmentioning

confidence: 99%

“…Photodetectors (PDs) comprising solution‐processed perovskite nanowires are one of the most promising next‐generation photodetection technologies 1,2 . Over the past few years, the performance of perovskite nanowire PDs has improved and is now equivalent to or even higher than that of standard commercial silicon photodiodes 3–11 . Despite the significant improvements in device performance, perovskite nanowire PDs still have many limitations that need to be addressed to enable their commercialization.…”

Section: Introductionmentioning

confidence: 99%

Ultrasensitive, flexible perovskite nanowire photodetectors with long‐term stability exceeding 5000 h

Zhou

et al. 2022

InfoMat

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Photodetectors (PDs) based on perovskite nanowires are among the most promising next‐generation photodetection technologies; however, their poor long‐term stability is the biggest challenge limiting their commercial application. Herein, an ionic liquid, 1‐butyl‐3‐methylimidazolium tetrafluoroborate (BMIMBF4), is incorporated as an additive into methylammonium lead triiodide (MAPbI3) nanowires; this not only effectively passivates defects to inhibit perovskite degradation but also leads to the formation of nanochannels, enabling fast charge transfer. As a result, the long‐term stability and performance of MAPbI3 nanowires are considerably improved. The detectivity, linear detection range, and noise equivalent power of the MAPbI3 nanowire PD reach 2.06 × 1013 Jones, 160 dB, and 1.38 × 10−15 W Hz−1/2, respectively, comparable to the highest performance of perovskite nanowire PDs reported to date. Moreover, the unencapsulated PD can maintain 100% of its initial performance after being exposed to an open‐air environment for more than 5000 h, establishing it as the most stable perovskite nanowire PD reported to date. Notably, the PD exhibits improved diffuse reflection imaging ability when compared with commercial silicon photodiode S2386. This study provides a new strategy for constructing sensitive, stable, and flexible perovskite PDs and will accelerate their commercial application in the future.

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High-Responsivity Si Photodiodes at 1060 nm in Standard CMOS Technology

Cited by 22 publications

References 18 publications

Low‐Dimensional Metal Halide Perovskite Photodetectors

Low‐Dimensional Metal Halide Perovskite Photodetectors

Optical FOMs of extended-source DG–TFET photodetector in the visible range of the spectrum

Ultrasensitive, flexible perovskite nanowire photodetectors with long‐term stability exceeding 5000 h

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