High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction

Chang, Kyoung Eun; Kim, Cihyun; Yoo, Tae Jin; Kwon, Min Gyu; Heo, Sungho; Kim, Soyoung; Hyun, Yujun; Yoo, Jung Il; Ko, Heung Cho; Lee, Byoung Hun

doi:10.1002/aelm.201800957

Cited by 58 publications

(26 citation statements)

References 37 publications

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“…, where I d is dark current and R is responsivity, as reported in other literature [39,40]. The calculated detectivity of is up to 1 × 10 14 Jones.…”

Section: Resultssupporting

confidence: 74%

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Jiang

Nie

et al. 2020

Nanophotonics

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AbstractThe hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, the responsivity (or gain) was increased at the expense of response time. In this paper, we devise a mechanism which can obtain an enhanced responsivity and fast response time simultaneously by manipulating the photogating effect (MPE). This concept is demonstrated by using a graphene/silicon-on-insulator (GSOI) hybrid structure. An ultrahigh responsivity of more than 107 A/W and a fast response time of 90 µs were obtained. The specific detectivity D* was measured to be 1.46 ⨯ 1013 Jones at a wavelength of 532 nm. The Silvaco TCAD modeling was carried out to explain the manipulation effect, which was further verified by the GSOI devices with different doping levels of graphene in the experiment. The proposed mechanism provides excellent guidance for modulating carrier distribution and transport, representing a new route to improve the performance of graphene/semiconductor hybrid photodetectors.

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“…, where I d is dark current and R is responsivity, as reported in other literature [39,40]. The calculated detectivity of is up to 1 × 10 14 Jones.…”

Section: Resultssupporting

confidence: 74%

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Jiang

Nie

et al. 2020

Nanophotonics

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“…The attractiveness of graphene integration into CMOS technology arises from a wide variety of potential applications, including photodetectors and modulators for the NIR regime 27 − 29 or passivation layers 17 , 30 . Hereby, different Ge platforms, like Ge on Si 31 , 32 or Ge on insulator 33 , 34 are used.…”

mentioning

confidence: 99%

Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD

Bekdüz

Kaya

Langer

et al. 2020

Sci Rep

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The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe contamination issues, direct growth of graphene on Ge is highly desirable. In this work, we present recipes for a direct growth of graphene on Ge via thermal chemical vapor deposition (TCVD) and plasma-enhanced chemical vapor deposition (PECVD). We demonstrate that the growth temperature can be reduced by about 200 °C in PECVD with respect to TCVD, where usually growth occurs close to the melting point of Ge. For both, TCVD and PECVD, hexagonal and elongated morphology is observed on Ge(100) and Ge(110), respectively, indicating the dominant role of substrate orientation on the shape of graphene grains. Interestingly, Raman data indicate a compressive strain of ca. − 0.4% of the graphene film fabricated by TCVD, whereas a tensile strain of up to + 1.2% is determined for graphene synthesized via PECVD, regardless the substrate orientation. Supported by Kelvin probe force measurements, we suggest a mechanism that is responsible for graphene formation on Ge and the resulting strain in TCVD and PECVD.

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“…7,8 Moreover, because of the relatively large Si bandgap of 1.12 eV, the responsivity of Si-based photodetectors is extremely low for near-infrared wavelengths, 9,10 which is a significant obstacle to its application in the infrared optical communication field. In recent years, Ge has been identified as a promising material to achieve high-efficiency group IV infrared photodetectors [11][12][13][14][15][16][17][18] and light sources [19][20][21][22][23][24][25][26][27] , owing to its small bandgap (0.67 eV) and small energy difference (0.13 eV) between the Γ and L valleys (ΔEΓ-L). Even with all these advantages, the application of Ge to optoelectronics is still restricted owing to its indirect bandgap and the concomitant low efficiency in optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy

et al. 2021

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High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction

Cited by 58 publications

References 37 publications

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD

Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy

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