High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes

Tabares, G.; Hierro, A.; Ulloa, J. M.; Guzmán, Á.; Muñoz, E.; Nakamura, Atsushi; Hayashi, Toshiya; Temmyo, Jiro

doi:10.1063/1.3340945

Cited by 59 publications

(42 citation statements)

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“…9 Currently, work on Mg x Zn 1Àx O is in the very early stages in terms of applications of Mg x Zn 1Àx O for devices applications such as UV light emitting diodes (LEDs) and detectors. [3][4][5]10,11 Ultimately, as with all optoelectronic devices, the presence of various defects that can create bandgap states is of great interest since they reduce performance, hinder reliability, and lower device lifetime. 12,13 There has been recent work on trap spectroscopy of Mg x Zn 1Àx O grown by metalorganic chemical vapor deposition (MOCVD) that focused on compositional ranges from 0.056 to 0.18 in which it was found that deep acceptor-like levels having energy levels of E v þ 0.28 eV and E v þ 0.58 eV, with concentrations as high as $10 18 cm…”

Section: Introductionmentioning

confidence: 99%

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Gür

Tabares

Arehart³

et al. 2012

Journal of Applied Physics

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Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1−xTe J. Appl. Phys. 112, 073111 (2012) Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen Appl. Phys. Lett. 101, 122104 (2012) Donor behavior of Sb in ZnO J. Appl. Phys. 112, 033706 (2012) Transition levels of defects in ZnO: Total energy and Janak's theorem methods J. Chem. Phys. 137, 054709 (2012) Ab-initio studies on Li doping, Li-pairs, and complexes between Li and intrinsic defects in ZnO J. Appl. Phys. 111, 123713 (2012) Additional information on J. Appl. Phys. Deep level defects in n-type unintentionally doped a-plane Mg x Zn 1Àx O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg x Zn 1Àx O were examined with x ¼ 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E c À 1.4 eV, 2.1 eV, 2.6 V, and E v þ 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E c À 2.1 eV, E v þ 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E v þ 0.3 eV and E c À 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E v þ 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E c À 1.4 eV and E c À 2.6 eV levels in Mg alloyed samples. V C 2012 American Institute of Physics.[http://dx

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Section: Introductionmentioning

confidence: 99%

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Gür

Tabares

Arehart³

et al. 2012

Journal of Applied Physics

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“…[1][2][3][4][5][6] and MgZnO alloys, [7][8][9][10][11][12][13] have been attracting more and more attention due to their huge potential for applications (missile plume warning, flame/engine control, air/ water purification, etc.). Different structures, such as photoconductive, 3,12 p-i-n, 11,13 Schottky barrier, 2,4,5,10,11 and metal-semiconductor-metal (MSM) 1,5,7,9 were used in the fabrication of these PDs.…”

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confidence: 99%

Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

Srour

Salvestrini

Ahaitouf

et al. 2011

Applied Physics Letters

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“…Thin films of Zn 1À x Mg x O are typically grown by pulsed laser deposition [6], molecular beam epitaxy [7], metal-organic chemical vapour deposition [8], or atomic layer deposition [9]. These techniques normally require substrate temperatures exceeding those suitable for technologically important substrate materials such as flexible plastics.…”

Section: Introductionmentioning

confidence: 99%