High resolution XPS study of oxide layers grown on Ge substrates

Tabet, Nouar; Faiz, M.; Hamdan, Nasser M.; Hussain, Zahid

doi:10.1016/s0039-6028(02)02354-3

Cited by 76 publications

(38 citation statements)

References 7 publications

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“…The stability in specific condition is an important indicator to evaluate the prospect of the passivated SAMs. The re-oxidation mechanism of passivated Ge surface can be summarized as the following two stages [8,31,45,46]: In the initial stage of oxidation, as the presence of defects or sub-oxide in the SAMs structures, the Ge surface is attacked by oxidizing agents including oxygen, boiling water, sulfuric acid or peroxide [26], thereby, the Ge-S or Ge-C bonds are broken and the transition oxide layer is formed. Once the degradation process begins, the protection against oxidation afforded by SAMs is eliminated.…”

Section: Mechanism and Stabilitymentioning

confidence: 99%

1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

Cai

et al. 2015

Applied Surface Science

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Section: Mechanism and Stabilitymentioning

confidence: 99%

1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

Cai

et al. 2015

Applied Surface Science

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“…In the literature, the Ge 3d peak position of elemental Ge is reported at BEs typically between 28.9 and 30.2 eV. [32][33][34][35] BE values up to 3.4 eV higher than the elemental peak position correspond to increasing Ge oxidation states. 36 In consequence, spectrum ͑2͒ clearly indicates the oxidation of the Ge deposit after evaporation at elevated temperatures on the Pr oxide surface.…”

Section: -4mentioning

confidence: 99%

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Giussani

Seifarth

Rodenbach

et al. 2008

Journal of Applied Physics

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A combined structure and stoichiometry study on the growth behavior of single crystalline Ge(111) layers on PrO2(111)∕Si(111) heterostructures is presented. Ex situ x-ray diffraction techniques indicate that the interaction between Ge and PrO2(111) results in a complete reduction of the buffer oxide to a cubic Pr2O3(111) film structure. In situ reflection high energy electron diffraction, x-ray and ultraviolet photoelectron spectroscopy studies demonstrate that this chemical reduction of the oxide support occurs during the initial Ge growth stage. The interaction of PrO2 with Ge results in the formation of an amorphous Ge oxide layer by the diffusion of lattice oxygen from the dielectric to the forming semiconductor deposit. After the complete conversion of PrO2 to cubic Pr2O3, the supply of reactive lattice oxygen is exhausted and the continuous Ge deposition reduces the initially formed amorphous GeO2-like film to GeO. The sublimation of volatile GeO uncovers the single crystalline cubic Pr2O3(111) film surface which provides a thermodynamically stable template for elemental Ge heteroepitaxy. A Volmer–Weber growth mode is observed which results after island coalescence in the formation of atomically smooth, single crystalline Ge(111) layers.

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“…However, XPS measurements (Fig. 3c) showed that the Ge 3d binding energy (32.4 eV) of the hybrid nanowires was almost identical to that of Ge (IV) (32.5 eV) in GeO 2 , [10] meaning that the interaction was weak. Considering that the IR spectrum did not contain a broad peak of protonated alkylamines at 3000 $ 2500 cm À1 [8] ( Fig.…”

mentioning

confidence: 97%

Synthesis and Characterization of Organic–Inorganic Hybrid GeO_x/Ethylenediamine Nanowires

et al. 2008

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Organic‐inorganic hybrid GeOx/ethylenediamine (EDA) nanowires are fabricated via a Fe2O3‐assisted hydrothermal method. EDA connects the inorganic units through (N‐H•••O‐Ge) H‐bonding to form a sub‐nanometer periodic structure in the nanowires. This structure exhibits an obvious quantum confinement effect and thereby a blue‐shift in the UV/vis spectrum. A Fe2O3‐assisted growth mechanism is proposed, in which (N‐H•••O‐Ge) H‐bonding induces anisotropic growth of the nanowires.

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High resolution XPS study of oxide layers grown on Ge substrates

Cited by 76 publications

References 7 publications

1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Synthesis and Characterization of Organic–Inorganic Hybrid GeO_x/Ethylenediamine Nanowires

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High resolution XPS study of oxide layers grown on Ge substrates

Cited by 76 publications

References 7 publications

1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Synthesis and Characterization of Organic–Inorganic Hybrid GeOx/Ethylenediamine Nanowires

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Synthesis and Characterization of Organic–Inorganic Hybrid GeO_x/Ethylenediamine Nanowires