High-resolution x-ray diffraction investigations of He-implanted GaAs

Zeimer, U.; Nebauer, E.

doi:10.1088/0268-1242/15/10/306

Cited by 19 publications

(6 citation statements)

References 21 publications

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“…Similarly as in Zeimer and Neubauer, [23] Wieteska et al, [20] Wierzchowski et al, [21] and Wieteska et al, [22] it was possible to obtain a reasonably good approximation of rocking curves without taking into account the distributions of the static Debye-Waller factor. According to our tests, including of the Debye-Waller factor does not change the position of interference maxima but only decreases their amplitudes.…”

Section: Numerical Calculation Of the Theoretical Rocking Curvesmentioning

confidence: 72%

“…In addition, diffraction synchrotron topographs have been taken, particularly the white beam Bragg-case synchrotron topographs recorded at relatively large film to crystal distances, which revealed some set of stripes and fringes corresponding to the interference maxima in the rocking curves. [20][21][22][23] The topographs enabled indication of the creation of additional extended defects and inhomogeneity of induced strain distribution.…”

Section: Methodsmentioning

confidence: 99%

“…The measurements included recording of the local rocking curves using a widely opened counter and the beam with the diameter of 50 m, enabling elimination of the effects caused by bending of the samples. In addition, diffraction synchrotron topographs have been taken, particularly the white beam Bragg‐case synchrotron topographs recorded at relatively large film to crystal distances, which revealed some set of stripes and fringes corresponding to the interference maxima in the rocking curves . The topographs enabled indication of the creation of additional extended defects and inhomogeneity of induced strain distribution.…”

Section: Methodsmentioning

confidence: 99%

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Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se⁺ and 1 MeV Al⁺ ions

et al. 2015

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The implantations were performed in 4H silicon carbide homoepitaxial layers deposited on (00.1) substrates with 8°offcut, and reference 4H-SiC substrates. The 2 MeV Se + ions and 1 MeV Al + ions were implanted with four fluences subsequently increased by the factor of 4-5×. The samples were studied by means of X-ray diffraction topography, high-resolution diffractometry, specular X-ray reflectometry, and Rutherford backscattering spectrometry\channeling method. The dislocation density in the samples evaluated from the diffraction topographs did not exceed 5 × 10 3 cm À2 . The representative roughness values evaluated from the reflectometric measurements was 2.3 ± 0.1 nm for the substrates and less than 1.4 ± 0.1 nm for the epitaxial layers.A significantly higher damage level in the case of 2 MeV Se + ions in comparison with 1 MeV Al + ion and a linear increase of the strain with the fluence was indicated, but the highest doses of selenium ions caused the amorphization of the implanted layer. It was also possible to obtain a good fitting of the theoretical and experimental diffraction curves approximating the strain profiles by the distribution of the point defects calculated with the SRIM 2008 code. It was confirmed that the maximum coming from surface damages observed in channeling spectra of the virgin substrate wafers was significantly higher than in the case of epitaxial layers.

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Section: Numerical Calculation Of the Theoretical Rocking Curvesmentioning

confidence: 72%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se⁺ and 1 MeV Al⁺ ions

et al. 2015

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“…43 Fig. 3(a) shows a comparison between the best-fit simulated and the experimental X-ray rocking curve for the sample implanted with H dose of 5 Â 10 16 cm À2 .…”

Section: Resultsmentioning

confidence: 99%

Defect formation and thermal stability of H in high dose H implanted ZnO

Chan

Vines

Johansen

et al. 2013

Journal of Applied Physics

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Articles you may be interested in Effect of implanted species on thermal evolution of ion-induced defects in ZnOChemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam J. Appl. Phys. 113, 043506 (2013); 10.1063/1.4789010Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion speciesWe studied the structural properties, defect formation, and thermal stability of H in hydrothermally grown ZnO single crystals implanted with Hdose ranging from 2:5 Â 10 16 to 1 Â 10 17 cm À2 . H implantation is found to create deformed layers with a uniaxial strain of 0.5-2.4% along the c-axis in ZnO, for the low and high dose, respectively. About 0.2-0.4% of the original implanted H concentration can still be detected in the samples by secondary ion mass spectrometry after annealing at a temperature up to 800 C. The thermally stable H is tentatively attributed to H related defect complexes involving the substitutional H that are bound to O vacancies and/or the highly mobile interstitial H that are bound to substitutional Li occupying Zn vacancies as the samples are cooled slowly from high temperature annealing. H implantation to a dose of 1 Â 10 17 cm À2 and followed by annealing at 800 C, is found to result in the formation of vacancy clusters that evolved into faceted voids with diameter varying from 2 to 30 nm. The truncations around the voids form more favorably on the O-terminated surface than on the Zn-terminated surface, suggesting that O is a preferred surface polarity for the internal facets of the voids in the presence of H. V C 2013 AIP Publishing LLC.

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“…He + implantation into GaAs leads to the formation of Frenkel pairs, i.e. interstitials and vacancies with nearly equal concentrations [9]. The isolation behaviour is mainly caused by the relatively low concentration of nuclear stopping defects and defects caused via the electronic stopping process.…”

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confidence: 99%

Ion-beam-induced isolation of GaAs layers by⁴He⁺implantation: effects of hot implants

Ahmed

Gwilliam

Sealy

2001

Semicond. Sci. Technol.

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The formation of thermally stable highly resistive regions in n-type GaAs layers during helium ion bombardment at elevated temperatures, where dynamic annealing of radiation-induced defects is substantial, was investigated and presented here. The substrate temperatures were chosen to be room temperature (RT), 100 and 200 • C. Semi-insulating GaAs wafers of (100) orientation were implanted with multi-energy 29 Si atoms to create a flat dopant distribution of about 0.7 µm in thickness. A uniform damage density was formed within the conductive layer by 2 × 10 14 cm −2 helium implantation at 600 keV to isolate the structure. Resistivity and Hall measurements were performed in order to study the evolution of the sheet resistance and Hall mobility as a function of post implant annealing temperature in these resistors implanted at three different temperatures. The samples were annealed in the range 100-800 • C and an optimum isolation of >10 7 ohms/ was achieved for samples implanted at either RT or elevated temperatures after annealing at 400 or 450 • C, respectively. Annealing at higher temperatures returned the resistivity to a value close to that of the starting material and it was found that RT implants recover quicker than elevated temperature implants. The isolated regions exhibited good stability to heat treatment up to 550 or 650 • C for 100 or 200 • C implants, respectively. No such annealing window for the thermal stability of the obtained isolation was found for samples implanted at room temperature. It is believed that isolating defects are more thermally stable in the case of hot implants than those formed by RT implantation.

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High-resolution x-ray diffraction investigations of He-implanted GaAs

Cited by 19 publications

References 21 publications

Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se⁺ and 1 MeV Al⁺ ions

Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se⁺ and 1 MeV Al⁺ ions

Defect formation and thermal stability of H in high dose H implanted ZnO

Ion-beam-induced isolation of GaAs layers by⁴He⁺implantation: effects of hot implants

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High-resolution x-ray diffraction investigations of He-implanted GaAs

Cited by 19 publications

References 21 publications

Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se+ and 1 MeV Al+ ions

Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se+ and 1 MeV Al+ ions

Defect formation and thermal stability of H in high dose H implanted ZnO

Ion-beam-induced isolation of GaAs layers by4He+implantation: effects of hot implants

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Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se⁺ and 1 MeV Al⁺ ions

Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se⁺ and 1 MeV Al⁺ ions

Ion-beam-induced isolation of GaAs layers by⁴He⁺implantation: effects of hot implants