High resolution X-ray diffraction imaging of lead tin telluride

Steiner, Bruce; Dobbyn, R. C.; Black, David R.; Burdette, Harold E.; Kuriyama, M.; Spal, R.; Simchick, Richard T.; Fripp, A. L.

doi:10.1016/0022-0248(91)90420-a

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“…Lead tin telluride (Pb 1−x Sn x Te) ternary solid solution is a narrow gap semiconductor with a rock salt crystalline structure that is generally applied in the fabrication of mid-infrared photodetectors and diode lasers, for which it is easily possible to vary the wavelength by adjusting the composition of the solid solution [1][2][3][4]. A proper technique of growth of highquality Pb 1−x Sn x Te single-crystal films is a key aspect of the manufacturing of high-performance devices [5].…”

Section: Introductionmentioning

confidence: 99%

Plasma sputtering of polycrystalline Pb_1−xSn_xTe thin films grown on glass substrates using hot wall deposition

Zimin

Горлачев

Гременок

et al. 2014

Semicond. Sci. Technol.

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In this work the investigations of the argon inductively coupled plasma sputtering of the Pb 1−x Sn x Te thin films with the composition variation of x = 0.16-0.95 grown by hot wall deposition technique on glass substrates were carried out. As-grown films had a columnar polycrystalline structure with the grain lateral dimensions of 0.2-5.0 μm, and the dependence of the lattice constant on composition x had a linear behaviour described by the Vegard's law. Energy dispersive x-ray microanalysis showed the presence of 5-8 at.% of oxygen in the films, which can be accumulated from the ambient air or from the substrate in the inter-grain boundaries. A phenomenon of a sputtering rate decrease for the polycrystalline lead tin telluride films in comparison to the single-crystal films is discussed. A novel important phenomenon of the formation of nanostructure arrays on the surface of the Pb 1−x Sn x Te thin films with the dependence on the sputtering rate during plasma treatment is reported.

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Section: Introductionmentioning

confidence: 99%

Plasma sputtering of polycrystalline Pb_1−xSn_xTe thin films grown on glass substrates using hot wall deposition

Zimin

Горлачев

Гременок

et al. 2014

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

High resolution X-ray diffraction imaging of lead tin telluride

Cited by 1 publication

References 4 publications

Plasma sputtering of polycrystalline Pb_1−xSn_xTe thin films grown on glass substrates using hot wall deposition

Plasma sputtering of polycrystalline Pb_1−xSn_xTe thin films grown on glass substrates using hot wall deposition

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High resolution X-ray diffraction imaging of lead tin telluride

Cited by 1 publication

References 4 publications

Plasma sputtering of polycrystalline Pb1−xSnxTe thin films grown on glass substrates using hot wall deposition

Plasma sputtering of polycrystalline Pb1−xSnxTe thin films grown on glass substrates using hot wall deposition

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Plasma sputtering of polycrystalline Pb_1−xSn_xTe thin films grown on glass substrates using hot wall deposition

Plasma sputtering of polycrystalline Pb_1−xSn_xTe thin films grown on glass substrates using hot wall deposition