High-Resolution Study of X-Ray Resonant Raman Scattering at the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>K</mml:mi></mml:math>Edge of Silicon

Szlachetko, Jakub; Dousse, J.‐Cl.; Hoszowska, J.; Pajek, M.; Barrett, R.; Berset, M.; Fennane, K.; Kubala‐Kukuś, A.; Szlachetko, M.

doi:10.1103/physrevlett.97.073001

Cited by 37 publications

(34 citation statements)

References 18 publications

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“…In addition, for the measurements of the Al-Ka line, the choice of the photon energy allowed to avoid the background contribution from the strong Si-Ka fluorescence line and also, because of the high resolution of the spectrometer and the energy-tunability of the SR source, to separate the Al-Ka fluorescence line from the Resonant Raman scattering of the Si L-shell. [22] The excellent background conditions for different exit angles can be seen in Fig. 4.…”

Section: Instrumentation and Measurementsmentioning

confidence: 80%

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

et al. 2012

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We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions.

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Section: Instrumentation and Measurementsmentioning

confidence: 80%

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

et al. 2012

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“…Besides the suppression of the strong Si-Kα fluorescence line and the increased photoabsorption cross-section if an excitation energy just above the Al K-edge is chosen, this excitation energy also resulted in a considerable background reduction as it is explicitly described in [13]. Briefly, the high resolution of our spectrometer allows separating the Si RRS-KL [15] structure, which is usually the limiting factor for the detection limit of Al and whose edge depends directly on the primary beam energy, from the Al-Kα fluorescence line by choosing an energy just above the Al K-edge. This separation is not possible with energy dispersive detectors due to their lower resolution.…”

Section: Measurementsmentioning

confidence: 99%

Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

Kayser

Banaś

Cao

et al. 2010

Spectrochimica Acta Part B: Atomic Spectroscopy

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The synchrotron based high resolution grazing emission x-ray fluorescence (GEXRF) technique is used to extract the distribution of Al ions which were implanted with a dose of 10 16 atoms/cm 2 in Si wafers with different energies ranging between 1 and 100 keV. In this purpose an angular scan around the critical angle was made. In addition special efforts were made to improve the experimental conditions. The extracted depth distributions are compared to theoretical calculations of the depth distributions resulting from ion implantations and a good agreement was found. Ion implantation is indeed a useful tool in the semiconductor industry, especially in the production of integrated circuits and junctions. The high-resolution GEXRF technique could support further developments in this domain.

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“…Nonetheless, with the development of wavelength-dispersive spectrometry (i.e. crystal X-ray spectrometers) the modulation of the off-resonant XES spectral structures' shape by the density of unoccupied states was confirmed experimentally with both conventional Cu Ka X-ray sources [32,33] and synchrotron radiation sources [34][35][36][37].…”

Section: Introductionmentioning

confidence: 99%

High energy resolution off-resonant spectroscopy: A review

Błachucki

Hoszowska

Dousse

et al. 2017

Spectrochimica Acta Part B: Atomic Spectroscopy

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We review the high energy resolution off-resonant spectroscopy (HEROS) technique. HEROS probes the unoccupied electronic states of matter in a single-shot manner thanks to the combination of off-resonant excitation around atomic core states using wavelength dispersive X-ray detection setups. In this review we provide a general introduction to the field of X-ray spectroscopy together with the specification of the available X-ray techniques and X-ray methodologies. Next, the theoretical description of the HEROS approach is introduced with a special focus on the derivation of the X-ray emission and X-ray absorption correspondence relation at off-resonant excitation conditions. Finally, a number of experimental HEROS reports are reviewed in the field of chemistry and material science. We emphasize the applicability of HEROS to pulsed X-ray sources, like X-ray free electron lasers, and support the review with experimental examples. The review is complemented with perspectives on and possible further applications of the HEROS technique to the field of X-ray science.

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High-Resolution Study of X-Ray Resonant Raman Scattering at theKEdge of Silicon

Cited by 37 publications

References 18 publications

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

High energy resolution off-resonant spectroscopy: A review

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