High-resolution Schottky CdTe diode detector

Takahashi, Tadayuki; Mitani, Takefumi; Kobayashi, Y.; Kouda, M.; Sato, G.; Watanabe, Shin; Nakazawa, K.; Okada, Y.; Funaki, Minoru; Ohno, Ryoichi; Mori, Kunishiro

doi:10.1109/tns.2002.1039655

Cited by 100 publications

(35 citation statements)

References 17 publications

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“…As reported in our previous publications, 1,18 we have demonstrated the uniform response of large THM-CdTe detectors with an area of 21 mm × 21 mm. Fig.…”

Section: High Resolution 8 × 8 Cdte Pixel Detectorssupporting

confidence: 75%

“…It features very low leakage current and high uniformity. 1,17,18 Since position resolution of a few mm is necessary to construct a Compton telescope, we have developed a pixel detector with 64 pixels. Fig.…”

Section: High Resolution 8 × 8 Cdte Pixel Detectorsmentioning

confidence: 99%

“…Based on our recent achievements for high resolution CdTe and Si imaging detectors, [1][2][3][4][5] we have proposed a Si/CdTe semiconductor Compton telescope as a next generation Compton telescope.…”

Section: Introductionmentioning

confidence: 99%

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Results of a Si/CdTe Compton telescope

Oonuki

Tanaka

Watanabe

et al. 2005

Hard X-Ray and Gamma-Ray Detector Physics VII

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We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2(FWHM).

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“…As reported in our previous publications, 1,18 we have demonstrated the uniform response of large THM-CdTe detectors with an area of 21 mm × 21 mm. Fig.…”

Section: High Resolution 8 × 8 Cdte Pixel Detectorssupporting

confidence: 75%

Section: High Resolution 8 × 8 Cdte Pixel Detectorsmentioning

confidence: 99%

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Results of a Si/CdTe Compton telescope

Oonuki

Tanaka

Watanabe

et al. 2005

Hard X-Ray and Gamma-Ray Detector Physics VII

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“…Metal-semiconductor junction formation also plays a critical role in achieving usable devices, particularly the formation of a high-quality Schottky contact to suppress leakage. 4 To underpin the technological development of CdTe, deeper understanding of both its intrinsic properties, as well as the impact of defects and device processing, is highly desirable. Determination of the mean inner potential is important in both respects.…”

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confidence: 99%

Determination of the mean inner potential of cadmium telluride via electron holography

Cassidy

Dhar

Shintake

2017

Applied Physics Letters

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Mean inner potential is a fundamental material parameter in solid state physics and electron microscopy and has been experimentally measured in CdTe, a technologically important semiconductor. As a first step, the inelastic mean free path for electron scattering in CdTe was determined, using electron energy loss spectroscopy, to enable precise thickness mapping of thin CdTe lamellae. The obtained value was λi(CdTe, 300 kV) = 192 ± 10 nm. This value is relatively large, given the high density of the material, and is discussed in the text. Next, electron diffraction and specimen tilting were employed to identify weakly diffracting lattice orientations, to enable the straightforward measurement of the electron phase shift. Finally, electron holography was utilized to quantitatively map the phase shift experienced by electron waves passing through a CdTe crystal, with several different propagation vectors. Utilization of both thickness and phase data allowed computation of mean inner potential as V0 (CdTe) = 14.0 ± 0.9 V, within the range of previous theoretical estimates.

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“…Based on our CdTe and Si detector technologies, [11][12][13][14][15] we are working on a new Si/CdTe semiconductor Compton telescope to explore the universe in the energy band from 100 keV to a few MeV. In this paper, we describe experimental results obtained with a prototype Compton telescope which consists of one layer of a Double-sided Si strip detector (DSSD) and one layer of CdTe pixel detectors.…”

Section: 10mentioning

confidence: 99%

Development of an Si/CdTe semiconductor Compton telescope

Tanaka

Mitani

Watanabe

et al. 2004

High-Energy Detectors in Astronomy

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We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9• and 5.7• at 122 keV and 356 keV, respectively.

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High-resolution Schottky CdTe diode detector

Cited by 100 publications

References 17 publications

Results of a Si/CdTe Compton telescope

Results of a Si/CdTe Compton telescope

Determination of the mean inner potential of cadmium telluride via electron holography

Development of an Si/CdTe semiconductor Compton telescope

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