Results of a Si/CdTe Compton telescope

Oonuki, Kousuke; Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin’ichiro; Nakazawa, K.; Mitani, Takefumi; Takahashi, Tadayuki; Tajima, H.; Fukazawa, Yasushi; Nomachi, M.

doi:10.1117/12.621809

Cited by 2 publications

(1 citation statement)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We have reported a significant improvement in the spectral properties of CdTe detectors by means of a Schottky diode (CdTe diode) [4,[8][9][10][11][12][13]. The improvement of the energy resolution by adopting the Schottky junction is dramatic.…”

Section: High Resolution Cdte Detectormentioning

confidence: 97%

A Si/CdTe Compton Camera for gamma-ray lens experiment

Takahashi

2006

Exp Astron

Self Cite

View full text Add to dashboard Cite

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γ -ray detection. However, a considerable amount of charge loss in these detectors results in a reduced energy resolution. We have achieved a significant improvement in the spectral properties by forming the Schottky junction on the Te side of the CdTe wafer. With the further reduction of leakage current by an adoption of guard ring structure, we have demonstrated a CdTe pixel detector with high energy resolution and full charge collection capabilty. The detector has a pixel size of a few mm and a thickness of 0.5 − 1 mm. We apply this high resolution detector to a new silicon and CdTe Compton Camera which features high angular resolution. We also describe a concept of the stack detector which consists of many thin CdTe layers and provides sufficient efficiency for hard X-rays and gamma-rays up to several hundred keV maintaining good energy resolution. A narrow-FOV Compton telescope can be realized by installing a Si/CdTe Compton Camera inside the deep well of an active shield. This configuration is very suitable as focal plane detector for future focusing gamma-ray missions.

show abstract

Section: High Resolution Cdte Detectormentioning

confidence: 97%

A Si/CdTe Compton Camera for gamma-ray lens experiment

Takahashi

2006

Exp Astron

Self Cite

View full text Add to dashboard Cite

show abstract

A stacked CdTe pixel detector for a compton camera

Oonuki

Tanaka

Watanabe

et al. 2007

Nuclear Instruments and Methods in Physics Research Section A:

Self Cite

View full text Add to dashboard Cite

We are developing a semiconductor Compton telescope to explore the universe in the energy band from several ten keV to a few MeV. A detector material of combined Si strip and CdTe pixel is used to cover the energy range around 60 keV. For energies above several hundred keV, in constrast, the higher detection efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as both an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton camera, we developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton kinematics within the energy band from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV. The angular resolution obtained at 511 keV is measured to be 12.2(FWHM).

show abstract

Results of a Si/CdTe Compton telescope

Cited by 2 publications

References 26 publications

A Si/CdTe Compton Camera for gamma-ray lens experiment

A Si/CdTe Compton Camera for gamma-ray lens experiment

A stacked CdTe pixel detector for a compton camera

Contact Info

Product

Resources

About