2012
DOI: 10.1016/j.snb.2012.05.066
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High-resolution real-time ion-camera system using a CMOS-based chemical sensor array for proton imaging

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Cited by 49 publications
(31 citation statements)
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“…As shown in Fig. 1a, each pixel comprises 4 transistors, where P2 is a PMOS ISFET transistor configured as a voltage-follower for hydrogen ion concentration detection, P1 is an in-pixel current source for P2, and P3 and N1 form a transmission gate for addressing using col and col ̅̅̅̅̅ [16]. The size of each pixel is 10.2 µm  10.2 µm, so that the entire array occupies an area of approximately 2.87 mm  2.87 mm.…”
Section: A 256  256 Isfet Array Chipmentioning
confidence: 99%
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“…As shown in Fig. 1a, each pixel comprises 4 transistors, where P2 is a PMOS ISFET transistor configured as a voltage-follower for hydrogen ion concentration detection, P1 is an in-pixel current source for P2, and P3 and N1 form a transmission gate for addressing using col and col ̅̅̅̅̅ [16]. The size of each pixel is 10.2 µm  10.2 µm, so that the entire array occupies an area of approximately 2.87 mm  2.87 mm.…”
Section: A 256  256 Isfet Array Chipmentioning
confidence: 99%
“…The metal layout in each pixel uses a metalvia stack to contact the underlying transistor to the top metal layer (MET 4) beneath the dielectric passivation layer. The MET 4 plate therefore forms a capacitor with the analyte above the chip [16]. The dielectric in contact with MET 4 acts as an ion sensing material which translates the hydrogen ion concentration in the analyte to a voltage at the polysilicon gate of the ISFET according to the Nernst equation.…”
Section: B Post-processing Of the Cmos Chipmentioning
confidence: 99%
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