High-resolution positive photoresists: novolac molecular weight and molecular weight distribution effects

Zampini, Anthony; Turci, Pamela; Cernigliaro, George; Sandford, Harold F.; Swanson, Gary J.; Meister, Catherine C.; Sinta, R.

doi:10.1117/12.20105

Cited by 7 publications

(6 citation statements)

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“…By means of the 'two-step' procedure, one can not only get 'high ortho' linear novolaks (figure 1), but also 'tailor made' 'alternating' or 'semi-alternating' resins starting from appropriate phenolic precursors with desired percentages of p-cresol content in resin structure. 9,[17][18][19] The determination of exact microstructure of a polymer is always a difficult task. In case of phenolformaldehyde resins, a large number of possible reaction sites make structure elucidation really challenging.…”

Section: Resultsmentioning

confidence: 99%

Evaluation of microlithographic performance of ‘deep UV’ resists: Synthesis, and 2D NMR studies on alternating ‘high ortho’ novolak resins

et al. 2012

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Section: Resultsmentioning

confidence: 99%

Evaluation of microlithographic performance of ‘deep UV’ resists: Synthesis, and 2D NMR studies on alternating ‘high ortho’ novolak resins

et al. 2012

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“…Using this two-step procedure one not only obtains 'high ortho' linear novolaks, but also 'tailor made' alternating or semialternating resins, starting from the appropriate phenolic precursors with the desired percentages of pcresol content in resin structure. 10,14,18,19 Two novolak oligomers were successfully synthesized using the two-step procedure. These were characterized using various techniques, viz.…”

Section: Resultsmentioning

confidence: 99%

Azido-m-meconine-‘high ortho’ Novolak resin-based negative photoresists for deep UV lithography

et al. 2009

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Photoactive chemicals blended with polymers, solvents and certain other additives serve as photoresists. A new photoactive compound (PAC), azido-m-meconine absorbing in the deep UV region has been blended with 'alternating' and 'semi-alternating' and 'high ortho' alternating novolak resins, based on m/p-cresol. The new photoresists have been evaluated as a negative tone deep UV photoresist for mircolithography.

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“…The molecular weight distribution of a photoresist, its polymer composition, and the presence of additives are pivotal factors that significantly influence LER in lithography. 10,16 The molecular weight distribution determines the photoresist's mechanical properties and its ability to form well-defined patterns. A narrower molecular weight distribution typically leads to a more uniform photoresist film, which can result in smoother line edges and reduced LER.…”

Section: Other Factorsmentioning

confidence: 99%

Photoresist process simulation to study line edge roughness

Sha,

Yao,

Jiang

et al. 2024

Optical and EUV Nanolithography XXXVII

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Roughness cannot be ignored as feature sizes shrink with Moore's Law, since it has potential to influence the device's performance. The roughness is usually described by line edge roughness (LER) and line width roughness (LWR). LER is the deviation of a feature edge from its ideal shape and is defined as three times the standard deviation, the deviation from the average line width is defined as LWR. For a certain critical dimension (CD) and pitch, there are many factors that can contribute to the roughness in the lithography process, such as source, mask optimizations, photoresist types and its processing, etc. An in-depth insight of the roughness formation mechanisms is essential to improve LER.This study employs photoresist process simulation to analyze LER, offering an efficient alternative to silicon data collection. Simulation analysis is carried out to examine the key factors influencing LER, including quencher concentration, photoacid diffusion length, PEB temperature. Concurrently, the study also delves into the impact of photoresist resin molecular composition and the development process on roughness. By using simulation to understand and predict roughness, the research provides insights into optimizing lithography parameters, thereby improving process stability and minimizing roughness formation.

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High-resolution positive photoresists: novolac molecular weight and molecular weight distribution effects

Cited by 7 publications

References 0 publications

Evaluation of microlithographic performance of ‘deep UV’ resists: Synthesis, and 2D NMR studies on alternating ‘high ortho’ novolak resins

Evaluation of microlithographic performance of ‘deep UV’ resists: Synthesis, and 2D NMR studies on alternating ‘high ortho’ novolak resins

Azido-m-meconine-‘high ortho’ Novolak resin-based negative photoresists for deep UV lithography

Photoresist process simulation to study line edge roughness

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