High-Resolution Photoinduced Transient Spectroscopy of Electrically Active Iron-Related Defects in Electron Irradiated High-Resistivity Silicon

Kamiński, P.; Kozłowski, Roman; Jelenski, A.; Mchedlidze, Teimuraz; Suezawa, Masashi

doi:10.1143/jjap.42.5415

Cited by 16 publications

(14 citation statements)

References 5 publications

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“…In n-type material, substitutional iron is 1/2 Fe s − . Note that Kaminski et al 15 conclude their study with the following: "…we can tentatively assign the trap P11 ͑380 meV͒ to an acceptor state of Fe s ." While short of a proof, this statement combined with our results suggest that further experimental studies of this center are desirable.…”

Section: B Fe Smentioning

confidence: 89%

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Iron in silicon: Interactions with radiation defects, carbon, and oxygen

2008

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First-principles theory is used to calculate the interactions between interstitial iron or the iron-boron pair and a vacancy, between interstitial iron and a divacancy, oxygen-vacancy pair, self-interstitial, and interstitial carbon, as well as substitutional carbon, interstitial oxygen, and the oxygen dimer in silicon. The structures, charge and spin states, binding energies, and, in some cases, vibrational spectra are predicted. The gap levels are estimated using the marker method. The strongest interactions involve vacancies, result in the formation of pairs of metastable defects, and profoundly change the electrical activity of the component species. Iron also traps at self-interstitial-type defects, but not at interstitial oxygen or substitutional carbon. Several observed but incompletely characterized defects are identified and trends in the behavior of Fe in Si are discussed.

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Section: B Fe Smentioning

confidence: 89%

“…However, it too anneals out at higher temperatures ͑300-350°C͒ than its NL counterpart ͑160°C͒. Photo-EPR data 13,15 show that the defect assigned to the ͕Fe i V͖ center has a hole trap at E v + 0.50 eV, while the defect assigned to the ͕Fe i VFe i ͖ center has a trap at E v + 0.53 eV.…”

Section: Experimental Informationmentioning

confidence: 99%

Iron in silicon: Interactions with radiation defects, carbon, and oxygen

2008

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“…Theory predicts that it has an acceptor level at E c − 0.41 eV, a value close to the P11 trap 33 at E c − 0.38 eV. In n-type Si, Fe s has spin 1/2 and therefore could give rise to the EPR spectrum I discussed above.…”

mentioning

confidence: 90%

“…Fe s is predicted 21 to have no donor but a deep acceptor level at E c − 0.41 eV instead. Kaminski et al 33 tentatively assigned the trap P11 ͑380 meV͒ to an acceptor state of Fe s . Theory also predicts 21 that Fe s has low spin, 0 Fe s 0 in p-type Si and 1/2 Fe s − in n-type Si.…”

mentioning

confidence: 99%

Two FeH pairs inn-type Si and their implications: A theoretical study

2008

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Experimental evidence for interstitial ͕FeH͖ pairs in n-type Si stems from thermally stimulated capacitance ͑TSCAP͒. Electron-paramagnetic resonance ͑EPR͒ data have also been interpreted in terms of ͕FeH͖ pairs. We present theoretical studies of two ͕FeH͖ pairs. The properties of the first match those of the TSCAP center but are incompatible with the EPR center. The second is a possible candidate for the EPR center. If true, this suggests that high-temperature anneals can introduce substitutional Fe in concentrations higher than commonly believed.

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“…(=/-)* 0.185 [44] 0.225 [37] 0.261 [13] 0.285 [44] 0.32 0.38 [43] 0.37 [13] 0.09 [31] 0.15 [36] (-/0)* 0.35 [37] 0.39 [38] 0.426 [16] 0.45 [39] 0.485 [25] 0.545 [16] 0.70 0.42 0.315 [36] (0/+)** 0.19 [28] 0.22 [21] 0.25 [20] 0.28 [21] 0.315 [39] 0.375 [16] 0.04 [32] 0.45 ** position of the energy level of the defect relative to the conduction band bottom; ** position of the energy level of the defect relative to the valence band top; ** energy of the forbidden band in silicon Е g = 1.12 eV at 300 K.…”

Section: Discussionmentioning

confidence: 99%

Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen

Dolgolenko

Litovchenko

Varentsov

et al. 2006

Physica Status Solidi (b)

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A comparative study is made on the radiation damage caused by fast-pile neutrons in n-Si with low and high concentrations of oxygen by measuring the effective carrier concentrations and energies of defects. The role of clusters in degrading Si parameters was studied both experimentally and theoretically. It has been shown experimentally that the fluence for which the carrier concentration tends to the intrinsic value does not depend on the oxygen concentration. The theoretical calculation has been carried out in the framework of Gossick's corrected model. The additional overlapping of clusters due to introduce of defects is explained. The model of the n → p conversion in n-Si with various oxygen concentrations is presented. It is shown that divacancy and di-interstitial congestions are responsible for the Fermi level position near the midgap at high fluences. Analysis of V ξ defect levels gave evidences of increase of level energy in the forbidden band on capture of the first or the second electron on the value ∆E = 0.33/ξ, where 1 ≤ ξ ≤ 5.

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High-Resolution Photoinduced Transient Spectroscopy of Electrically Active Iron-Related Defects in Electron Irradiated High-Resistivity Silicon

Cited by 16 publications

References 5 publications

Iron in silicon: Interactions with radiation defects, carbon, and oxygen

Iron in silicon: Interactions with radiation defects, carbon, and oxygen

Two FeH pairs inn-type Si and their implications: A theoretical study

Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen

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