High-resolution nondestructive patterning of isolated organic semiconductors

Lo, Yi-Chen; Li, Dawen; Sun, Zheng; Shaik, Shoieb; Cheng, Xing

doi:10.1116/1.4757956

Cited by 5 publications

(7 citation statements)

References 18 publications

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“…In the horizontal OFET configuration, charges are transported in the plane of the film, with crystalline lamellae mainly parallel to the substrate (edge‐on, Figure b). However, some applications (OPVs, OLEDs, vertical OFETs ) require charge transport in the vertical direction (normal to the plane of the film). For these, vertical orientation of either the π stacking (face‐on), or of the chain backbone (chain‐on, Figure b), the latter being the fastest charge transport route, is needed to efficiently direct charges in the out‐of‐plane direction.…”

Section: Mobility Values Of the Micropatterned P3ht Film Measured By mentioning

confidence: 99%

Ultrahigh Mobility in an Organic Semiconductor by Vertical Chain Alignment

et al. 2016

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A method to produce highly efficient and long-range vertical charge transport is demonstrated in an undoped polythiophene thin film, with average mobilities above 3.1 cm(2) V(-1) s(-1) . These record high mobilities are achieved by controlled orientation of the polymer crystallites enabling the most efficient and fastest charge transport along the chain backbones and across multiple chains. The significant increase in mobility shown here may present a new route to producing faster and more efficient optoelectronic devices based on organic materials.

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Section: Mobility Values Of the Micropatterned P3ht Film Measured By mentioning

confidence: 99%

Ultrahigh Mobility in an Organic Semiconductor by Vertical Chain Alignment

et al. 2016

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“…The condition for thermally imprinting Teflon-AF film was 230 °C and 900 psi [6]. To avoid the Teflon-AF film from peeling off from the substrate, the silicon substrate was primed with hexamethyldisilazane (HMDS), which improves the adhesion between the substrate and the film.…”

Section: Sidewall Fabrication and Pattern Transfermentioning

confidence: 99%

“…After removing the Teflon-AF residue layer by oxygen RIE, its surface turns into hydrophilic. The hydrophilic surface benefits the process of spin-coating PMMA solution on the Teflon-AF template 6 . Here, the PMMA solution was spin-coated at 3000 rpm to form a PMMA layer covering the Teflon-AF template.…”

Section: Sidewall Fabrication and Pattern Transfermentioning

confidence: 99%

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Polymeric sidewall transfer lithography

Cheng²

2022

J. Phys. Commun.

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This work is to demonstrate a low cost and time-conserving technique to create nano-trenches by transferring nano-scale polymeric sidewalls into substrate. The polymeric sidewall is a vertically spreading layer deposited by spin-coating a polymer solution on a vertical template. By varying processing parameters such as the solution concentration or the spin-coating speed, the dimension of the sidewall can be changed, which, after pattern transfer, also changes the nano-trench dimension. In this work, high-resolution trenches of about 15 nm have been achieved after transferring straight line sidewalls into substrate. Other than straight line sidewall patterns, this method also fabricates ring-shaped patterns including circles, squares, and concentric squares. With various shapes of sidewall patterns, this technique has a potential to implement other practical applications such as fabricating high-resolution nanoimprint molds of 15 nm.

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“…Nanoimprint lithography (NIL) has been widely used in patterning applications, such as nanostructure patterning, 17 electrode patterning, 18 and organic semiconductor patterning. [9][10][11][12][13][14][15][16][17][18][19][20][21] In this study, NIL was employed to define the channel length because it has the potential capability to create patterns ranging from micrometers to nanometers. The imprint mold was made of SiO 2 and was coated with 1 h,1 h,2 h,2 h-perfluorodecyltrichlorosilane (FDTS), a hydrophobic coating, for easy separation of the mold from the PMMA resist after NIL.…”

Section: Electrode Patterning By Nanoimprintmentioning

confidence: 99%

Self-Aligned Organic Metal–Semiconductor Field-Effect Transistor

Cheng

2022

J. Electron. Mater.

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We propose the design and fabrication of a coplanar electrode structure for an organic metal–semiconductor field-effect transistor (OMESFET), with the gate electrode self-aligned between the source and drain electrodes. We first used nanoimprint lithography (NIL) to define a channel area of the device on a patterned metal, and then used chemical wet etching to create the source and drain electrodes by removing the metal in the channel area. After the wet etching, the gate electrode was deposited in the channel area. The organic semiconductor was then deposited to cover the patterned electrodes. The rectifying response and the device characteristics prove that the self-aligned device is a functional OMESFET. In this experiment, we also demonstrated that the self-aligned OMESFET has lower driving voltages and smaller subthreshold swing (SS) than that of a conventional organic metal–insulator–semiconductor field-effect transistor (OMISFET). Compared with the most common OMESFET structure, this self-aligned coplanar structure effectively eliminates the overlapping area between the gate and source/drain electrodes commonly seen in currently reported OMESFETs, which means that this self-aligned device structure reduces the parasitic capacitance, theoretically allowing the transistor to have a higher cutoff frequency. These features render our proposed OMESFET devices more favorable for low-power and high-frequency organic circuit applications.

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High-resolution nondestructive patterning of isolated organic semiconductors

Cited by 5 publications

References 18 publications

Ultrahigh Mobility in an Organic Semiconductor by Vertical Chain Alignment

Ultrahigh Mobility in an Organic Semiconductor by Vertical Chain Alignment

Polymeric sidewall transfer lithography

Self-Aligned Organic Metal–Semiconductor Field-Effect Transistor

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