High-resolution electron microscopy of 90° ferroelectric domain boundaries in BaTiO3 and Pb(Zr0.52Ti0.48)O3

Thermal activation of ferroelectric switching

“…͑A reflection stacking fault for head to head, or tail to tail, non-180°domains and a rotation stacking fault for head to tail and 180°domains.͒ The width of domain walls have been reported as being in the range of 1-10 nm. [1][2][3][4][5][6]9,10 The atomic offsets and misalignments that generate the diffuse and distorted structure of these domain boundaries have been confirmed both by transmission electron microscopy investigations [20][21][22] and ab initio calculations. 23 It has been suggested that this structure makes the domain walls highly mobile and, by implication, favorable sites for the formation of steps and domain nucleation.…”

Transmission electron microscopy studies of Pb(Zr0.99Ti0.01)O3 single crystals

“…2). Different origin of the ferroic domain contrast was discussed earlier by several authors [17,24,25]. High magnification image obtained with the electron beam parallel to another ͗111͘ c , namely, the [011] o orthorhombic direction, is shown in Fig.…”

“…Moreover, a change in contrast of bright and dark fringes can be seen, parallel to the intersection of the wall and the sample surface. This contrast variation results from the fact that the domain wall is not perfectly parallel to the electron beam [24]. Fig.…”

Domain boundary engineering

“…There are few experimental observations which confirm these results; probably the most extensive study is by Chrosch and Salje [77] who measured the wall thickness in LaAlO 3 as a function of temperature over a very large temperature interval [78][79][80][81][82][83][84][85][86][87].…”