High resolution 3D imaging of integrated circuits by x-ray ptychography

Odstrčil, Michal; Holler, Mirko; Raabe, Jörg; Guizar‐Sicairos, Manuel

doi:10.1117/12.2304835

“…The missing requirements for such studies are the ability to electrically contact the prepared samples and a different scheme for the ptychographic scan. The first requirement is easily overcome by a laminographic stage [53,54], suitable for planar devices and which does not require milling to micron size. The second requirement is simply met by placing the sample closer to the focus point, so that the measured XBIC/XBIV map can have a resolution closer to the focus size.…”

Section: E Outlookmentioning

confidence: 99%

Resonant x-ray ptychographic nanotomography of kesterite solar cells

Fevola

¹

,

Jørgensen

²

,

Verezhak

³

et al. 2020

Phys. Rev. Research

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The Cu 2 ZnSnS 4 kesterite is currently among the most promising inorganic, nontoxic, earth-abundant materials for a new generation of solar cells. Interfacial defects and secondary phases present in the kesterite active layer are, however, detrimental to the performance of the device. They are typically probed with techniques that are destructive or limited to the surface, and x-ray diffraction cannot reliably distinguish small amounts of zinc sulfide or copper tin sulfide from kesterite. Conversely, resonant ptychographic tomography, which relies on electron density contrast, overcomes these limitations. Here, we demonstrate how this technique can enable localization and quantification of secondary phases, along with measurements of adherence at the interfacial layers, on complete and functioning devices. In our experiment, we utilize an x-ray energy value far from absorption edges as well as three single energies corresponding to the absorption edges of Cu, Zn, and Sn, to gain elemental sensitivity to these elements and enhance contrast between phases with similar electron density. As a result, we image and identify in the active layer grains of a secondary phase, namely, zinc sulfide, which is not easily discriminated by other standard characterization techniques. In addition, we are able to observe Cu diffused from the active layer into the CdS buffer layer as well as Cu in the form of copper sulfide at their interface. Other relevant morphological features are best resolved off-resonance at the optimal energy for the synchrotron beamline with ∼20 nm resolution.

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“…With this approach, it can be determined which contacts are really connected and which are just fake. Such advanced cross-sectioning is achievable with FIB milling or with X-rays [7,41,42,43].…”

Section: Cell Camouflagingmentioning

confidence: 99%

Improving the Physical Security of Microchip

Malčík¹,

Drahanský²

2019

IJSIA

0

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Nowadays, microchips are virtually everywhere, from simple home devices to confidential military equipment. We must not forget the medical systems that have a great impact on our quality of life as well. As can be seen, the importance of these tiny integrated circuits is immense. Preserving the reliability of these devices and the confidentiality of data these devices are processing is absolutely substantial. The integrated circuit (IC) industry has been rapidly evolving in recent decades and employing ICs is becoming normal and inevitable in nearly all aspects of our lives. The initial IC evolution era paid attention primarily to the technological evolution itself. Aspects like security were always one step back due to the fallacious feeling of the inherent security of these very tiny components. After realizing that the opposite is true, we have to focus on securing the critical devices against tampering, information theft, counterfeiting, etc. In scope of this paper, it means especially hindering of physical attacks on the chips.

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“…Lately, X-ray has become a serious technology used in the observation of advanced chips [27], [28], [29]. As chips are turning into unimaginably complex devices, the classic method of invasive reverse engineering is becoming harder to be successfully performed.…”

Section: Active Defense Against X-ray Observation Techniquementioning

confidence: 99%

“…With this approach, it can be determined which contacts are actually connected and which ones are just fake. Such advanced cross-sectioning is achievable with FIB milling or with X-rays [30], [51], [28], [27].…”

Section: Cell Camouflagingmentioning

confidence: 99%

Improving the Physical Security of Microchips against Side-Channel Attacks

Malčík¹,

Drahanský²

2019

IJAST

0

View full text Add to dashboard Cite

Nowadays, microchips are virtually everywhere, from simple home devices to confidential military equipment. We must not forget the medical systems that have a great impact on our quality of life as well. As can be seen, the importance of these tiny integrated circuits is immense. Preserving the reliability of these devices and the confidentiality of data these devices are processing is absolutely substantial. The integrated circuit (IC) industry has been rapidly evolving in recent decades and employing ICs is becoming normal and inevitable in nearly all aspects of our lives. The initial IC evolution era paid attention primarily to the technological evolution itself. Aspects like security were always one step back due to the fallacious feeling of the inherent security of these very tiny components. After realizing that the opposite is true, we have to focus on securing the critical devices against tampering, information theft, counterfeiting, etc.

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High resolution 3D imaging of integrated circuits by x-ray ptychography

Cited by 6 publications

References 49 publications

Resonant x-ray ptychographic nanotomography of kesterite solar cells

Resonant x-ray ptychographic nanotomography of kesterite solar cells

Improving the Physical Security of Microchip

Improving the Physical Security of Microchips against Side-Channel Attacks

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