High resolution 1280×1024, 15 μm pitch compact InSb IR detector with on-chip ADC

Nesher, Ofer; Pivnik, I.; Ilan, E.; Calalhorra, Z.; Koifman, A. I.; Vaserman, I.; Schlesinger, J.; Gazit, R.; Hirsh, I.

doi:10.1117/12.817054

Cited by 13 publications

(7 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Universities typically focused on smaller FPAs with other performance improving features (e.g., an InAlSb current blocking layer in the active region of the detector) while companies, most notably Raytheon, focused on expanding pixel counts in FPAs beyond the megapixel range, out as far as 2K × 2K pixels. Whereas many single pixel devices were capable of operating at near room temperature, the FPAs were typically operated at liquid nitrogen (LN 2 ) temperatures or lower to achieve the levels of performance desired [65–70]. …”

Section: Bulk Detectorsmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

224

110

View full text Add to dashboard Cite

The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

show abstract

Section: Bulk Detectorsmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

224

110

View full text Add to dashboard Cite

show abstract

“…This result demonstrates the excellent linearity exhibited by Hercules over almost the full dynamic range. 7 One should note that this level of performance is actually achieved at the system level, since Hercules is a digital ROIC.…”

Section: Roicmentioning

confidence: 98%

Megapixel digital InSb detector for midwave infrared imaging

et al. 2011

View full text Add to dashboard Cite

Since the late 1990s Semiconductor devices (SCDs) has developed and manufactured a variety of InSb two-dimensional (2D) focal plane arrays (FPAs) that were implemented in many infrared (IR) systems and applications. SCD routinely manufactures both analog and digital InSb FPAs with array formats of 320×256, 480×384, and 640×512 elements, and pitch size in the range 15 to 30 μm. These FPAs are available in many packaging configurations, including fully integrated detector-Dewarcooler-assembly, with either closed-cycle Stirling or open-loop JouleThomson coolers. In response to a need for very high resolution midwave IR (MWIR) detectors and systems, SCD has developed a large format 2D InSb detector with 1280×1024 elements and pixel size of 15 μm. A digital readout integrated circuit (ROIC) is coupled by flip-chip bonding to the megapixel InSb array. The ROIC is fabricated in CMOS 0.18-μm technology, that enables the small pixel circuitry and relatively low power generation at the focal plane. The digital ROIC has an analog to digital (A/D) converter per-channel and allows for full frame readout at a rate of 100 Hz. Such on-chip A/D conversion eliminates the need for several A/D converters with fairly high power consumption at the system level. The digital readout, together with the InSb detector technology, lead to a wide linear dynamic range and low residual nonuniformity, which is stable over a long period of time following a nonuniformity correction procedure. A special Dewar was designed to withstand harsh environmental conditions while minimizing the contribution to the heat load of the detector. The Dewar together with the low power ROIC, enable a megapixel detector with overall low size, weight, and power with respect to comparable large format detectors. A variety of applications with this detector make use of different cold shields with different f-number and spectral filters. In this paper we present actual performance characteristics of the megapixel InSb detector and demonstrate its high manufacturability. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).

show abstract

“…The InSb diodes are produced in the standard and well established process of SCD's InSb diodes 1 (planar te chnology). The SNIR RO IC is part of th e 15µ m-pitch family o f SCD d igital o utput R OICs 2,3 , i ncluding Pelican -D 4 an d Hercules 5 . T herefore, SNIR shares p eripheral circu its (o utside th e p ixel matrix) su ch as readou t ch annels, I/O circu its an d con trols, with its 15µm predecessors.…”

Section: Roic and Fpamentioning

confidence: 99%

Advanced multi-function infrared detector with on-chip processing

et al. 2011

View full text Add to dashboard Cite

Modern electro-optical systems contain several components such as thermal imager, laser designator, laser range finder, etc. The dem and for com pact syste ms w ith l ow po wer co nsumption an d l ow cost can be ad dressed by i ncorporating some of the traditional system abilities into the IR detector. We present SNIR, a new type of detector, which consists of a Read O ut Int egrated C ircuit (R OIC) wi th adva nced o n-chip si gnal p rocessing. T he R OIC i s fl ip chi p-bonded to a 640×512 In Sb det ector ar ray of 1 5µm pi tch. S NIR di gital R OIC can b e ope rated i n either o ne of t he f ollowing f our different modes of operation. The first operation mode is standard thermal imaging, which has typical functionalities and performance of MWIR detector. The second operation mode is a dual-function mode that includes both standard thermal imaging and information on Asynchronous Laser Pulse Detection (ALPD) for each pixel. The detection probability of a laser pu lse is significantly in creased by i ntegrating a dedicated i n-pixel circu it fo r iden tifying a fast sig nal tem poral profile. Since each pixel has internal processing to ide ntify laser pulses, it is possible a lso to m easure the ela psed time between a trigg er and th e detection of a laser pulse. Th is yi elds a t hird m ode of operation i n which the detector i s synchronized t o a l aser an d becomes a Tw o-dimensional Laser R ange Finder (TLRF). T he forth operation m ode i s dedicated to Low Noise Imaging (LNIM) for the SWIR band, where the IR radiation signal is low. It can be used in both passive or active imaging. We review some of t he predicted and measured results for the different modes of operation, both at the detector level and at the system level.

show abstract

High resolution 1280×1024, 15 μm pitch compact InSb IR detector with on-chip ADC

Cited by 13 publications

References 7 publications

Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

Megapixel digital InSb detector for midwave infrared imaging

Advanced multi-function infrared detector with on-chip processing

Contact Info

Product

Resources

About