High resistivity Si as a microwave substrate

Reyes, A.C.; El-Ghazaly, S.M.; Dorn, S.; Dydyk, M.; Schroder, D.K.; Patterson, H.

doi:10.1109/ectc.1996.517417

Cited by 36 publications

(14 citation statements)

References 13 publications

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“…Currently, resistivities of at most [10][11][12][13][14][15][16][17][18][19][20] cm [low-resistivitysilicon(LRS)]arebeingused.Thiscorrespondsto conductivities that lead to considerable substrate losses and, thus, to excessive attenuation of integrated transmission lines [7] and reduced quality factors of on-chip inductors [8]. III-V-based processes have ideal substrates in that respect, but these lack other important properties such as high thermal conductivity and high and frequency-independent permittivity that qualify silicon as a true microwave substrate [7]. High-resistivity silicon (HRS) has, therefore, been investigated for use in integrated circuit fabrication processes.…”

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confidence: 99%

Surface-passivated high-resistivity silicon as a true microwave substrate

Spirito

Paola

Nanver

et al. 2005

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper addresses the properties of a surface-passivated (enhanced) high-resistivity silicon (HRS) substrate for use in monolithic microwave technology. The detrimental effects of conductive surface channels and their variations across the wafer related to the local oxide and silicon/silicon-dioxide interface quality are eliminated through the formation of a thin amorphous layer at the wafer surface. Without passivation, it is found that the surface channels greatly degrade the quality of passive components in HRS by masking the excellent properties of the bulk HRS substrate and by causing a spread in parameters and peak values across the wafer. Moreover, it is seen that the surface passivation leads to excellent agreement of the characteristics of fabricated components and circuits with those predicted by electromagnetic (EM) simulation based on the bulk HRS properties. This is experimentally verified for lumped (inductors and transformers) and distributed (coplanar waveguide, Marchand balun) passive microwave components, as well as for a traveling-wave amplifier, through which also the integration of transistors on HRS and the overall parameter control at circuit level are demonstrated. The results in this paper indicate the economically important possibility to transfer microwave circuit designs based on EM simulations directly to the HRS fabrication process, thus avoiding costly redesigns.Index Terms-High-resistivity silicon (HRS), inductors, Marchand balun, substrate passivation, transformers, traveling-wave amplifier (TWA).

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mentioning

confidence: 99%

Surface-passivated high-resistivity silicon as a true microwave substrate

Spirito

Paola

Nanver

et al. 2005

IEEE Trans. Microwave Theory Techn.

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“…L S R S(DC) C P L 1 3.8 nH 0.62 Ω 83 fF L 2 9.0 nH 0.48 Ω 67 fF Fig . 5 shows the electrical performance and RLC fit for the 3.8-nH inductor.…”

Section: Devicementioning

confidence: 99%

“…Many works have already been done and a lot of solutions have been investigated to increase these performances. For reducing substrate-related losses, highresistivity silicon or SOI substrates have been used [2], insulating the inductor from the silicon substrate [3]. Etching a cavity underneath the inductor have also been investigated [4].…”

Section: Introductionmentioning

confidence: 99%

High quality factor copper inductors integrated in deep dry-etched quartz substrates

et al. 2007

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This paper reports on an inductor fabrication method capable to deliver high quality factor (Q) and high self resonance frequency (SRF) devices using quartz insulating substrates and thick high-conductivity copper lines. Inductors are key devices in RF circuits that, when fabricated on traditional semiconductor substrates, suffer from poor RF performances due to thin metallization and substrate related losses. Many previous works revealed that RF performances are strongly dependent on the limited metallization thickness and on the conductivity of the substrate. In this paper we demonstrate a new fabrication process to improve the Q factor of spiral inductors by patterning thick high conductive metal layers directly in a dielectric substrate. Moreover, we develop and validate accurate equivalent circuit modeling and parameter extraction for the characterization of the fabricated devices.

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“…Loss can be further decreased by burying the transmission lines underneath the membrane, which permits arbitrarily thick metal lines without adversely affecting the CMUT membrane movement. Based on other literature results, we expect that transmission lines with less than 0.4 dB/cm loss at 1 GHz can be fabricated on high resistivity silicon substrates [16]. For the device measured in Fig.…”

Section: Strategies For Improving Sensitivitymentioning

confidence: 99%

Acoustic Sensing with Capacitive Micromachined Membranes and Radio Frequency Detection

Hansen¹,

Ergun²,

Khuri‐Yakub³

2001

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Broadband acoustic sensing over several decades of frequency has traditionally been difficult to achieve. Conventional condenser and electret microphones typically depend on membrane or cavity resonances to achieve their maximum sensitivity, which inherently limits the frequency range of the acoustic sensor. In addition, the large, thin diaphragms typically used to sense low-frequency sound are extremely fragile and are not suited for hostile outdoor environments as might be encountered on the battlefield.New microphones using capacitive micromachined ultrasonic transducer (CMUT) technology and radio frequency (RF) detection overcome many of the problems associated with conventional microphones. These micromachined membranes are small and robust enough that they can be vacuum-sealed and still withstand atmospheric pressure and submersion in water. The sealing process not only seals out moisture, but also suppresses the mechanical noise associated with squeezefilm damping of air behind the membrane. Because the ultrasonic membrane's resonance is well above the frequencies of interest, the membrane mechanical response is very flat from DC up to several hundred kilohertz. Although the mechanical signal-to-noise ratio is very high, the changes in membrane capacitance are very small, so a sensitive RF detection scheme is necessary to recover the acoustic signal.In this paper, we present the theory and modeling of RF detection with CMUT membranes. Previous experimental results already demonstrate the flat frequency response of the acoustic sensor, with responses varying only 1 dB over a range of 0.1 Hz to 100 kHz. Several strategies, most notably for reducing transmission line loss, are described to improve the sensitivity of the microphone from its measured value of 53 dB/Pa/Hz on recent devices. With the improvements, simulation results predict that device sensitivities greater than 100 dB/Pa/Hz are possible with a device that is only 4mm in size. Report Documentation Page Abstract Subject Terms Report Classification unclassified Classification of this page unclassified Classification of Abstract unclassified Limitation of Abstract UUNumber of Pages 9

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High resistivity Si as a microwave substrate

Cited by 36 publications

References 13 publications

Surface-passivated high-resistivity silicon as a true microwave substrate

Surface-passivated high-resistivity silicon as a true microwave substrate

High quality factor copper inductors integrated in deep dry-etched quartz substrates

Acoustic Sensing with Capacitive Micromachined Membranes and Radio Frequency Detection

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