High reliability performance of 0.1-&amp;#x03BC;m Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates

Chou, Y.C.; Leung, D.; Biedenbender, M.; Eng, D.; Buttari, D.; Mei, X.B.; Lin, Che-Kai; Tsai, R.; Lai, R.; Barsky, M.; Wójtowicz, M.; Oki, A.K.; Block, Thomas

doi:10.1109/iciprm.2010.5516184

Cited by 3 publications

(1 citation statement)

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“…The Ea was validated to be greater than 1.5 eV for Pt-sunken gate InP HEMTs [12,33]. Moreover, our recent 3-temperature lifetest demonstrates that the Ea of Ptsunken gate InP HEMT MMICs on 4-inch InP substrates is greater than 1.5 eV [36]. The Arrhenius plot from the reliability analysis shows that the MTF exceeds the typical MTF benchmark of 1x10 6 hours at T channel of 125 °C.…”

Section: Progressive Schottky Junction Reactionmentioning

confidence: 96%

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

Chou

Leung

Biedenbender

et al. 2010

2010 IEEE International Reliability Physics Symposium

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Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature lifetesting. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at T ambient of 280 °C projects the median-time-to-failure exceeding 1x10 6 hours at T channel of 125 °C. This result indicates that the promising initial reliability performance was achieved on Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates.

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Section: Progressive Schottky Junction Reactionmentioning

confidence: 96%