1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition

Gao, Cheng; Li, Haiou; Huang, Jiaoying; Diao, Shenglong

doi:10.1007/s11771-012-1427-1

J. Cent. South Univ.

2012

DOI: 10.1007/s11771-012-1427-1

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1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition

Cheng Gao

Haiou Li

Jiaoying Huang

et al.

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1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition

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References 17 publications

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