High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for Use in the UV-Visible Spectrum

Mehta, Karan; Detchprohm, Theeradetch; Park, Young Jae; Liu, Yuh-Shiuan; Moreno, Oliver; Alugubelli, Shanthan Reddy; Wang, Shuo; Ponce, Fernando; Shen, Shyh‐Chiang; Dupuis, R. D.; Yoder, P. Douglas

doi:10.1109/jqe.2017.2766288

Cited by 8 publications

(14 citation statements)

References 48 publications

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“…Heavy Doping to Reduce the Refractive Index: Furthermore, heavily doping a layer can reduce its refractive index by increasing the material's plasma frequency, [69] and due to band filling effects (Burstein-Moss effect). [70,71] Recent experiments at Georgia Tech [17] reproduce the results of Perlin et al, [72] with nþþ GaN showing an index contrast of 1.5-2% with UID-GaN.…”

Section: Design Of a High Reflectivity Bottom Uv-dbrmentioning

confidence: 54%

“…In ref. [17], we have found the optimum balance between the high index contrast and low loss for AlGaN compositions in DBRs with center wavelengths of 370 and 226 nm.…”

Section: Design Of a High Reflectivity Bottom Uv-dbrmentioning

confidence: 84%

“…As another example, when designing the DBRs, one might first only perform a 1D transmission matrix method (TMM) simulation, which takes only a few seconds to simulate the reflectivity spectrum of various types of DBRs. [17] If the reflectivity is too low, there is no need to run an entire laser simulation.…”

Section: The Use Of Numerical Simulation In Laser Designmentioning

confidence: 99%

“…[16] Alternative strategies to obtain a high reflectivity bottom DBR are discussed in Section 3.4.2, where a hybrid epitaxial and metal mirror is proposed-an epitaxial DBR to provide a reflectivity of >90% and a planar metal mirror underneath provides the remaining 90% reflectivity. [17]…”

Section: Higher Optical Loss In Uv Light Emittersmentioning

confidence: 99%

“…However, in ref. [17], we theoretically and experimentally demonstrate methods to increase Δn without increasing the tensile strain. By correctly choosing the high-index material's aluminum mole fraction, we can exploit the near-bandedge excitonic resonances to enhance the refractive index of the material.…”

Section: Design Of a High Reflectivity Bottom Uv-dbrmentioning

confidence: 99%

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Philosophy of Approaching a Laser Design Problem: Illustrated by the Design of Ultraviolet Vertical‐Cavity Laser Diodes

Mehta

Yoder

2020

Physica Status Solidi (a)

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The objective of this article is to demonstrate a general approach to the problem of designing a novel laser diode. This involves first understanding prior work in this and related fields (literature survey), and then acquiring a thorough understanding of the relevant physics. This in turn enables the development and/or selection of appropriate models and tools for that problem followed by partitioning the problem into smaller solvable chunks. This involves identifying the key contributing factors affecting poor laser performance (sources of optical loss, poor injection efficiency, high thermal resistance, etc.), quantifying and ranking their relative importance, and finally finding solutions to these problems. The final step involves putting all these pieces back together to arrive at the final laser design. This step is challenging due to the strong coupling between electrical, optical, and thermal physics in a laser diode. Any design changes must be considered through all three lenses. Herein, this approach to laser design will be demonstrated in the context of a novel III–N‐based ultraviolet vertical‐cavity surface‐emitting laser diode (UV‐VCSEL).

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Section: Design Of a High Reflectivity Bottom Uv-dbrmentioning

confidence: 54%

“…In ref. [17], we have found the optimum balance between the high index contrast and low loss for AlGaN compositions in DBRs with center wavelengths of 370 and 226 nm.…”

Section: Design Of a High Reflectivity Bottom Uv-dbrmentioning

confidence: 84%

Section: The Use Of Numerical Simulation In Laser Designmentioning

confidence: 99%

Section: Higher Optical Loss In Uv Light Emittersmentioning

confidence: 99%

Section: Design Of a High Reflectivity Bottom Uv-dbrmentioning

confidence: 99%

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Philosophy of Approaching a Laser Design Problem: Illustrated by the Design of Ultraviolet Vertical‐Cavity Laser Diodes

Mehta

Yoder

2020

Physica Status Solidi (a)

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Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

Small

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are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

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A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

et al. 2020

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Ultraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) may enable new applications in all these areas. Until now, there have only been a few demonstrations of ultraviolet-emitting VCSELs, mainly optically pumped, and all with low Al-content AlGaN cavities and emission near the bandgap of GaN (360 nm). Here, we demonstrate an optically pumped VCSEL emitting in the UVB spectrum (280–320 nm) at room temperature, having an Al0.60Ga0.40N cavity between two dielectric distributed Bragg reflectors. The double dielectric distributed Bragg reflector design was realized by substrate removal using electrochemical etching. Our method is further extendable to even shorter wavelengths, which would establish a technology that enables VCSEL emission from UVA (320–400 nm) to UVC (<280 nm).

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High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for Use in the UV-Visible Spectrum

Cited by 8 publications

References 48 publications

Philosophy of Approaching a Laser Design Problem: Illustrated by the Design of Ultraviolet Vertical‐Cavity Laser Diodes

Philosophy of Approaching a Laser Design Problem: Illustrated by the Design of Ultraviolet Vertical‐Cavity Laser Diodes

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

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