High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators

Enhancement of quantum efficiency in thin photodiodes through absorptive resonance

“…For comparison, theoretically calculated curves for these three cases are shown dotted or dashed in the same figure. In these calculations, the refractive indexes of various layers were obtained from the single oscillator model [8], [9] and the complex refractive index of A1 was obtain by linear interpolation between reported values [7].…”

“…L << 1, where a! is the power absorption coefficient, then the quantum efficiency of a nonresonant detector is given by 9 (1 -R , ) a L…”

“…Specifically, we assume Am = 1.52 pm, a = 7,000 cm-I [6], n, -ikm = 1.9 -i13 (for aluminum) [7], nc = 3.22 (for AlInAs) [8], ng = na = 3.60 (for GaInAs) [8], nL = 3.22, nH = 3.42 (for AlGaInAs) [8], [9], and n, = 3.17 (for InP), where nL and nH stand for the lower and the higher values of np and n4.…”

Alloy composition dependence of 1.55 μm GaP1−xSbx/GaP0.2Sb0.8Bragg reflector reflectivity under normal and oblique incidence

“…A DBR reflectivity of more than 99.9% is required to apply a quantum well active layer with which a sufficiently low threshold current density is expected [3]. A number of DBR stacks with a variety of material choices have been studied to achieve high-reflectivity DBRs [4][5][6][7][8]. These materials must have a large refractive index difference between them and no absorption at the operating wavelength.…”

Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates

“…Also, we have previously demonstrated a GaAsSb/ AlAsSb DBR lattice matched to InP operating at 1.55 m. 10 Reflectivity of ϳ80% was observed, mainly due to a low number of mirror pairs ͑8 1/2͒ and absorption in the GaAsSb layers. Other work on semiconductor DBRs in the near infrared range ͑у1.3 m͒ includes InP/InGaAsP structures, 11 AlAsSb/GaInAs DBRs, 12 AlGaInAs/InP DBRs, 13 and InGaAs/InAlAs DBRs. 14 FP cavities consisting of two such DBRs do not currently have sufficiently high performance to produce lasing VCSELs.…”