High rate dry etching of InGaZnO by BCl3/O2 plasma

Park, Wanjae; Whang, Ki‐Woong; Yoon, Young Gwang; Kim, Jeong Hwan; Rha, Sa‐Kyun; Hwang, Cheol Seong

doi:10.1063/1.3624594

Cited by 9 publications

(6 citation statements)

References 13 publications

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“…Cl-based etch gas, such as Cl 2 [32,33] and BCl 3 [34] , can be used to etch a-IGZO films. However, the etch rate may be not so fast as using gas mixtures containing CH 4 because the surface reaction products ZnCl 2 , InCl 3 , GaCl 3 are non-volatile compounds in the range of pressure (mTorr range) and temperature (∼ 25 • C) used in most of the dry etching experiments [29] .…”

Section: Cl-based Etch Gasmentioning

confidence: 99%

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Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Zheng¹,

Li²,

Wang³

et al. 2012

Plasma Sci. Technol.

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Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.

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Section: Cl-based Etch Gasmentioning

confidence: 99%

“…The a-IGZO films could also be etched with F-based etch gas, such as CF 4 [32,34] . The etch rate is slower than that of Cl-based etch gas because the surface reaction product F-based compounds have a high melting point and boiling point (as is illustrated in Table 2).…”

Section: F-based Etch Gasmentioning

confidence: 99%

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Zheng¹,

Li²,

Wang³

et al. 2012

Plasma Sci. Technol.

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“…The scaling of semiconductor technology nodes as well as the patterning roadmap of complex materials such as IGZO have predominantly been driven by the reactive ion etching (RIE) technique over the past decade. Commonly known halogen (F/Cl/Br)-based chemistries have been proposed to pattern IGZO via RIE. − To the best of our knowledge, the feature dimensions and pitches studied in these reports are above 200 nm . Because these halogenated IGZO layers are non-volatile (Table ), significant amount of ion-assisted bombardment is required.…”

Section: Introductionmentioning

confidence: 99%

High-Density Patterning of InGaZnO by CH₄: a Comparative Study of RIE and Pulsed Plasma ALE

Kundu

Decoster

Bézard

et al. 2022

ACS Appl. Mater. Interfaces

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InGaZnO (IGZO)-based thin-film transistors and selector diodes are increasingly investigated for a broad range of applications such as high-resolution displays, high-density memories, and high-speed computing. However, its potential to be a key material for next-generation devices is strongly contingent on developing patterning processes with minimal damage at nanoscale dimensions. IGZO can be etched using CH4-based plasma. Although the etched by-products are volatile, there remains a concern that passivationan associated effect arising from the use of a hydrocarbon etchantmay inhibit the patterning process. However, there has been limited discussion on the CH4-based etching of IGZO and the subsequent patterning challenges arising with pitch scaling (<200 nm). In this work, we systematically investigate dry chemical etching schemes to pattern an IGZO film into densely packed nanostructures using CH4. Straight IGZO lines, ∼45 nm in width at a pitch of ∼135 nm, are produced by employing the traditional reactive ion etching method. While the passivating effect of CH4 does not impede the etching process, any further shrinkage of feature and pitch dimensions amplifies reactive ion etching-induced damage in the form of profile distortion and residue redeposition. We show that this is efficiently addressed via atomic layer etching (ALE) of IGZO with CH4 using a pulsed plasma. The unique combination of ALE and plasma pulsing enables controlled reduction of ion-assisted sputtering and redeposition of residues on the patterned IGZO features. This approach is highly scalable and is successfully applied here to achieve well-separated IGZO lines, with critical dimensions down to ∼20 nm at a dense pitch of ∼36 nm. These lines exhibit steep profiles (∼80°) and no undesirable change in IGZO composition post-patterning. Finally, ALE of IGZO under pulsed plasma, reproduced on 300 mm wafers, highlights its suitability in large-scale manufacturing for the intended applications.

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“…Kim et al reported the etching mechanisms of InGaZnO 4 thin films in a CF 4 /Ar/O 2 inductively coupled plasma system using a Langmuir probe [18]. Although there are many conventional studies on the plasma etching process of IGZO thin films, most of them have focused on the investigation of etch rate, etch selectivity, and the etch mechanism itself [17][18][19][20]. However, the composition of the thin-film surface is altered after the etching process by etching residues or implanted atoms [21,22].…”

Section: Introductionmentioning

confidence: 99%

Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

et al. 2021

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Plasma etching processes for multi-atomic oxide thin films have become increasingly important owing to the excellent material properties of such thin films, which can potentially be employed in next-generation displays. To fabricate high-performance and reproducible devices, the etching mechanism and surface properties must be understood. In this study, we investigated the etching characteristics and changes in the surface properties of InGaZnO4 (IGZO) thin films with the addition of O2 gases based on a CF4/Ar high-density-plasma system. A maximum etch rate of 32.7 nm/min for an IGZO thin film was achieved at an O2/CF4/Ar (=20:25:75 sccm) ratio. The etching mechanism was interpreted in detail through plasma analysis via optical emission spectroscopy and surface analysis via X-ray photoelectron microscopy. To determine the performance variation according to the alteration in the surface composition of the IGZO thin films, we investigated the changes in the work function, surface energy, and surface roughness through ultraviolet photoelectron spectroscopy, contact angle measurement, and atomic force microscopy, respectively. After the plasma etching process, the change in work function was up to 280 meV, the thin film surface became slightly hydrophilic, and the surface roughness slightly decreased. This work suggests that plasma etching causes various changes in thin-film surfaces, which affects device performance.

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High rate dry etching of InGaZnO by BCl3/O2 plasma

Cited by 9 publications

References 13 publications

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

High-Density Patterning of InGaZnO by CH₄: a Comparative Study of RIE and Pulsed Plasma ALE

Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

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High rate dry etching of InGaZnO by BCl3/O2 plasma

Cited by 9 publications

References 13 publications

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

High-Density Patterning of InGaZnO by CH4: a Comparative Study of RIE and Pulsed Plasma ALE

Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

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High-Density Patterning of InGaZnO by CH₄: a Comparative Study of RIE and Pulsed Plasma ALE