High-rate deposition of silicon thin film layers using linear plasma sources operated at very high excitation frequencies (80-140 MHz)

Leszczynska, B.; Strobel, C.; Leszczynski, S.; Albert, Matthias; Bartha, Johann W.; Stephan, U.; Kuske, J.

doi:10.1117/12.929265

Cited by 3 publications

(2 citation statements)

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“…Thus, the VHF band used for thin-film silicon solar cell deposition is extended to larger than 100 MHz. Beneficial effects when using frequencies up to 140 MHz have already been shown by Leszczynska et al on a single layer level [7]. These results were encouraging to use this frequency for a whole mc-Si:H p-i-n solar cell.…”

Section: Introductionsupporting

confidence: 53%

High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

Strobel

Leszczynska

Merkel

et al. 2015

Solar Energy Materials and Solar Cells

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Section: Introductionsupporting

confidence: 53%

High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

Strobel

Leszczynska

Merkel

et al. 2015

Solar Energy Materials and Solar Cells

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“…15 Beneficial effects of using 140 MHz PECVD compared to lower frequencies were already demonstrated by Leszczynska et al for thin-film silicon solar cells. 16 Here, we…”

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confidence: 95%

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Łupina

Strobel

Dąbrowski

et al. 2016

Applied Physics Letters

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Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial doping in graphene and an increase of compressive strain. Upon rapid thermal annealing the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film whereby a high crystalline quality of graphene is preserved.Ability to deposit uniform thin layers of insulators and semiconductors on graphene is of crucial importance for many envisioned applications of this material in advanced electronic and photonic devices.1 Si-graphene junctions are particularly interesting for graphene-based photodetectors, sensors, and high-frequency vertical heterojunction transistors.

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Influence of the excitation frequency increase on a fluid model of the capacitively coupled argon plasma

Leszczynski

Strobel

Albert

et al. 2014

2014 IEEE 41st International Conference on Plasma Sciences (ICOPS) Held With 2014 IEEE International Conference on High-Power P

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A very high frequency plasma enhanced chemical vapor deposition technology (VHF PECVD) is widely used for deposition of amorphous and microcrystalline silicon layers 1 . The satisfying deposition rates and process efficiency combined with adequate material quality make this technology a good solution in the industry applications, especially in the large scale deposition systems. The modelling of the plasma inside a reactor helps developing the design of the deposition systems, as well as to enhance the deposition parameters. The advantage of the excitation frequency increase on the PECVD technology has been introduced 2 . The already reported plasma model analyses are applied only in the frequency range up to 100 MHz. However, the frequency range from 140 MHz to 200MHz is a new field of interest and requires enhanced simulation procedures. Therefore, two 1D plasma models of a CCP reactor for two different frequency ranges (13.56 MHz and 140 MHz) are introduced in this work. Due to the complexity of the silane plasma chemistry, pure argon was used to reveal a clear picture of the modelling issues. The discharge conditions inside the large scale reactors (length from 30 cm up to 3 m, the pressure up to 1 Torr) require to use a fluid model instead of the particle models. This work describes the difference in the fluid model definition caused by the frequency increase. In particular the modifications of the electron energy distribution function (EEDF) as well as the species transport coefficients are taken into consideration. The variations of the plasma parameters are also presented. 1. B. Leszczynska, et.al, "Adaptation of PECVD deposition system for very high excitation frequencies over 81.36 MHz", 28th European Photovoltaic Solar Energy Conference and Exhibition, 2013, pp. 2568 -2572. 2. B. Leszczynska, et.al, "High-rate deposition of silicon thin film layers using linear plasma sources operated at very high excitation frequencies (80-140 MHz)", Thin Film Solar Technology IV.

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High-rate deposition of silicon thin film layers using linear plasma sources operated at very high excitation frequencies (80-140 MHz)

Cited by 3 publications

References 0 publications

High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Influence of the excitation frequency increase on a fluid model of the capacitively coupled argon plasma

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