High Rate Deposition of Al2O3 Coatings Reactively Sputter Deposited

Mercs, D.; Petitot, Christian; Duranteau, Audrey; Demange, Valérie; Coddet, Christian

doi:10.1002/ppap.200730606

Cited by 4 publications

(4 citation statements)

References 16 publications

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“…This was suggested by Mercs et al in the case of the deposition of Al 2 O 3 thin films by reactive magnetron sputtering from a hot (i.e. not cooled) aluminum target [3], although no quantification of the IR radiation flux was reported.…”

Section: Introductionmentioning

confidence: 97%

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IR emission from the target during plasma magnetron sputter deposition

et al. 2013

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In this article, energy flux measurements at the substrate location are reported. In particular, the energy flux related to IR radiation emanating from the titanium (10 cm in diam.) target surface is quantified during magnetron sputter deposition processes. In order to modulate the plasma-target surface interaction and the radiative energy flux thereof, the working conditions were varied systematically. The experiments were performed in balanced and unbalanced magnetic field configurations with direct current (DC), pulsed DC and high power impulse magnetron sputtering (HiPIMS) discharges. The power delivered to the plasma was varied too, typically from 100 to 800 W. Our data show that the IR contribution to the total energy flux at the substrate increases with the supplied sputter power and as the discharge is driven in a pulse regime. In the case of HiPIMS discharge generated with a balanced magnetic field, the energy flux associated to the IR radiation produced by the target becomes comparable to the energy flux originating from collisional processes (interaction of plasma particles such as ions, electron, sputtered atoms etc. with the substrate). From IR contribution, it was possible to estimate the rise of the target surface temperature during the sputtering process. Typical values found for a titanium target are in the range 210 °C to 870 °C

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Section: Introductionmentioning

confidence: 97%

“…In most cases, IR emission from the hot target surface is completely ignored as its interaction with the growing film. One of the main reason lie in the difficulty to evidence such energetic contribution by conventional discharge diagnostics [3].…”

Section: Introductionmentioning

confidence: 99%

IR emission from the target during plasma magnetron sputter deposition

et al. 2013

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“…It has been found that T cr of the film decreases and its crystallinity increases when high fluxes of ions ν i are incident at the surface of the growing film. Therefore, reactive ionized magnetron sputtering [13] or reactive high-power pulsed magnetron sputtering [1][2][3]5,[9][10][11][12] has been used in many experiments. Also, a low-temperature formation of α-Al 2 O 3 thin films on a crystalline Cr 2 O 3 template has been reported [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…cemented carbides. Therefore, a great effort has been devoted to the search of a process or method which allows the crystallization temperature T cr of the α-Al 2 O 3 phase to be decreased [1][2][3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%