High Quantum Efficiency of (Au/n-SnO2/p-PSi/c-Si/Al) solar cell after annealing of Nd:YAG laser

Abstract

Transparent and conducting SnO 2 thin film has been produced on (quartz and porous silicon) substrates using rapid photothermal oxidation of pure Sn in air at 600 o C oxidation temperature and different oxidation time. The structural properties and scan electron microscope of the prepared films were studied. The photovoltage properties of a Au/n-SnO 2 /p-PSi/c-Si solar cell are investigated under irradiation of Nd:YAG laser pulses. The porous Si layer is synthesized on a single crystalline ptype Si using electrochemical etching in aqueous hydrofluoric acid at a current density of 25 mA/cm 2 for a 30-min etching time. The structure of the porous layer is investigated using scan electron microscope. The photovoltage properties are found to be dependent on the laser fluencies.