High quantum efficiency blue–ultraviolet ZnSe pin photodiode grown by MBE

Ishikura, Hitoshi; Fukuda, Nariyuki; Itoi, Masaki; Yasumoto, Kazue; Abe, Tomoki; Kasada, Hirofumi; Ando, Koshi

doi:10.1016/s0022-0248(00)00288-8

Cited by 24 publications

(8 citation statements)

References 6 publications

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“…These new optical devices include efficient LEDs, LDs and various photovoltaic devices operating in the green-blue-violet wavelength region [1][2][3][4][5][6]. In this paper we present our recent activities on new photovoltaic device applications of ZnSe(binary)-ZnSSe(ternary) II-VI wide bandgap semiconductors as highly efficient and long lived photo-detectors.…”

Section: Introductionmentioning

confidence: 99%

Highly Efficient Blue-Ultraviolet Photodetectors Based on II-VI Wide-Bandgap Compound Semiconductors

Ando

Ishikura

Fukunaga

et al. 2002

phys. stat. sol. (b)

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Subject classification: 68.55. Ln; 72.40.+w; 81.15.Hi; 85.60.Dw; 85.60.Gz; S8.12; S8.15 II-VI ZnSe (binary) and ZnSSe (ternary) widegap compound semiconductor based photovoltaic devices (p-i-n and avalanche photodiodes (APDs)) are developed for the blue-violet (460-400 nm) optical wavelength region by molecular beam epitaxial (MBE) growth. The ternary compound ZnSSe p-i-n structure photodiodes, grown with complete lattice matched condition on GaAs substrates, exhibit high external quantum efficiencies of 80-70% in the blue-violet optical region with extremely low dark currents (~pA/mm 2 ), These diodes reveal stable and long-lived operation at 300 K. Also presented is ZnSe and ZnSSe based blue-violet APD devices, fabricated by precise defect control and process techniques. This new device has revealed large signal gain (G) of G = 50 for ZnSe, and G = 60 for the ZnSSe APD device under high electric field strength of (0.8-1.1) Â 10 6 V/cm. Important device parameters, ionization coefficients of photo-injected electrons and holes, and device stability are also discussed.

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Section: Introductionmentioning

confidence: 99%

Highly Efficient Blue-Ultraviolet Photodetectors Based on II-VI Wide-Bandgap Compound Semiconductors

Ando

Ishikura

Fukunaga

et al. 2002

phys. stat. sol. (b)

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“…For practical device applications, it is necessary to grow strained and/or lattice matched ternary/quaternary epitaxial layers. Using 2D heterostructures, ZnSe-based light emitting diodes [1], laser diodes [2] and photodetectors [3] have been demonstrated. It is also possible to grow one-dimensional (1D) ZnSe nanowires by various methods [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

ZnSe/ZnCdSe heterostructure nanowires

Hsiao

Chang

Hung

et al. 2010

Journal of Crystal Growth

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“…Other than the binary ZnSe, it is possible to grow strained and/or lattice matched ternary/quaternary epitaxial layers so as to achieve ZnSe-based heterostructures. Using these heterostructures, ZnSe-based light emitting diodes [ 1 ], laser diodes [ 2 ], and photodetectors [ 3 ] have all been demonstrated. Other than 2-D epitaxial films, one-dimensional (1-D) semiconductor nanostructures such as nanowires, nanorods, nanotips, and nanotubes have attracted great attention in recent years.…”

Section: Introductionmentioning

confidence: 99%

A Quaternary ZnCdSeTe Nanotip Photodetector

et al. 2009

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The authors report the growth of needle-like high density quaternary Zn0.87Cd0.13Se0.98Te0.02nanotips on oxidized Si(100) substrate. It was found that average length and average diameter of the nanotips were 1.3 μm and 91 nm, respectively. It was also found that the as-grown ZnCdSeTe nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. Furthermore, it was found that the operation speeds of the fabricated ZnCdSeTe nanotip photodetector were fast with turn-on and turn-off time constants both less than 2 s.

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High quantum efficiency blue–ultraviolet ZnSe pin photodiode grown by MBE

Cited by 24 publications

References 6 publications

Highly Efficient Blue-Ultraviolet Photodetectors Based on II-VI Wide-Bandgap Compound Semiconductors

Highly Efficient Blue-Ultraviolet Photodetectors Based on II-VI Wide-Bandgap Compound Semiconductors

ZnSe/ZnCdSe heterostructure nanowires

A Quaternary ZnCdSeTe Nanotip Photodetector

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