High quantum efficiency 200&amp;#x2013;1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers

Koda, Yasumasa; Kuroda, Rihito; Sugawa, Shigetoshi

doi:10.1109/icsens.2014.6985340

Cited by 2 publications

(4 citation statements)

References 9 publications

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“…With the developed technology, the high QE in UV-light waveband was maintained through and after the stress evaluation period while for the np type PD, QE degradation was observed for UV light waveband. Here, to improve the light transmittance to Si, PDA light receiving regions are divided into several regions and a high transmittance optical layer corresponding to the receiving light waveband is formed above Si in each region [12,15]. The concept was verified by evaluating the fabricated seven types of PDs with different optical layers composed of only SiO 2 and developed small extinction coefficient SiN x films as shown in Figure 8 [12].…”

Section: Introductionmentioning

confidence: 99%

“…We have developed wide spectral response, high sensitivity and high stability advanced Si PD pn junction formation technology based on the flattened Si surface and high transmittance on-chip optical filter formation technology [9][10][11][12]. In the next section, developed key process technologies are described and the performances of fabricated linear PDA and wide dynamic range and ultrahigh speed CMOS image sensors employing the developed technology are described in the sections 3 and 4.…”

Section: Introductionmentioning

confidence: 99%

“…Here, to improve the light transmittance to Si, PDA light receiving regions are divided into several regions and a high transmittance optical layer corresponding to the receiving light waveband is formed above Si in each region [12,15]. The concept was verified by evaluating the fabricated seven types of PDs with different optical layers composed of only SiO 2 and developed small extinction coefficient SiN x films as shown in Figure 8 [12]. A very high QE for a wide light waveband is to be obtained by this PDA technology [15].…”

Section: Introductionmentioning

confidence: 99%

“…In order to simultaneously achieve a high Si internal quantum efficiency (QE) and a high stability of sensitivity to UV-light, high concentration surface layer with steep dopant concentration profile is introduced on the flattened Si surface [9][10][11]. In addition, high transmittance optical filters are formed above Si PD in order to improve sensitivity to targeted light waveband [12]. The relatively thick and low dopant concentration epitaxial layer is utilized in order to improve the NIR light sensitivity.…”

Section: Introductionmentioning

confidence: 99%

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UV/VIS/NIR imaging technologies: challenges and opportunities

Kuroda

Sugawa

2015

Image Sensing Technologies: Materials, Devices, Systems, and Applications II

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Challenges and opportunities of ultraviolet (UV), visible (VIS) and near-infrared (NIR) light imaging technologies are overviewed in this paper. For light detectors and image sensors for UV/VIS/NIR imaging, it is required that they have high sensitivity for wide spectral light waveband or targeted narrow waveband as well as the high stability of light sensitivity toward UV light based on cost effective technology. Wide spectral response, high sensitivity and high stability advanced Si photodiode (PD) pn junction formation technology based on the flattened Si surface and high transmittance on-chip optical filter formation technology were developed. A linear photodiode array (PDA), wide dynamic range and ultrahigh speed CMOS image sensors employing the developed technology were fabricated and their advanced performances are described in this paper.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

UV/VIS/NIR imaging technologies: challenges and opportunities

Kuroda

Sugawa

2015

Image Sensing Technologies: Materials, Devices, Systems, and Applications II

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[Paper] A High Quantum Efficiency High Readout Speed 1024 Pixel Ultraviolet-Visible-Near Infrared Waveband Photodiode Array

Kuroda

Akutsu

Koda

et al. 2016

MTA

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Spectrometers are widely used in the various fields of scientific analyses, life science, environmental assessment, food inspection and so on 1)~3). High sensitivity for UV-VIS-NIR light waveband is strongly required for PDA used in spectrometers to analyze various measurement samples accurately. In addition, a high readout speed performance is beneficial to improve the measurement throughput. Furthermore, high stabilities of light sensitivity and dark current of PDA toward UV-light irradiation are required for a long time use of the spectrometers without complicated maintenance. The quantum efficiency (QE) of a light detector is determined by the product of light transmittance to the photoelectric conversion part of PD and the efficiency to collect photo-generated carriers. In recent years, a Si photodiode junction technology to achieve high incident light sensitivity and high stability toward UV-light using a surface high concentration layer with steep dopant concentration profile formed on flattened Si surface has been developed, and single PD, PDA and area CMOS image sensors using the developed technology have been reported to exhibit superior characteristics 4)~9). Fig.1 shows the schematic image of a spectrometry system with a diffraction grating and a PDA as spectral light detector. Spectral light is irradiated to the pre-designated positions of the PDA. For general PDAs, the dielectric film above the PD is uniformly formed across the whole light receiving surface, thus, it is difficult to optimize the transmittance for all of the receiving light waveband. Meanwhile, image sensors with Fabry-Perot spectral filters directly formed on the top surface of monochrome CMOS image sensors have been reported to be useful to form hyperspectral line scan imagers 10). The reported Abstract A high QE and high readout speed ultraviolet-visible-near infrared (UV-VIS-NIR) light waveband linear photodiode array (PDA) is demonstrated in this paper. For the developed 1024 pixel PDA with the pixel size of 25 µm H × 2500 µm V , seven types of high transmittance optical layers were introduced for multiply divided pixel groups to achieve high QE for receiving light waveband and multiple transfer gates were placed along the long side of PD to improve readout speed. The fabricated PDA exhibited an average QE of 70 % for 200-800 nm and 80 % for 200-320 nm wavebands, the full well capacity (FWC) of over 70 pC and the line scan period of 0.33 msec simultaneously. The condition of top surface dopant concentration of the surface p + layer of photodiode (PD) to prevent sensitivity degradation due to deuterium lamp irradiation was also clarified.

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High quantum efficiency 200–1000 nm spectral response photodiodes with on-chip multiple high transmittance optical layers

Cited by 2 publications

References 9 publications

UV/VIS/NIR imaging technologies: challenges and opportunities

UV/VIS/NIR imaging technologies: challenges and opportunities

[Paper] A High Quantum Efficiency High Readout Speed 1024 Pixel Ultraviolet-Visible-Near Infrared Waveband Photodiode Array

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