High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates

Preferential orientation of NV defects in CVD diamond films grown on (113)-oriented substrates

“…The extremely narrow range of optimal growth conditions required [21,22] leads to low growth rates (a few μm/h at most) and make it difficult to tune NV density in the layers. Moreover high residual stress can be responsible for crack formation and strong background blue luminescence is usually observed.…”

Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films

“…Actually, CVD‐grown diamond (100) substrates are commercially available, while the (111) substrates are not. Recently, Tallaire et al reported the growth of crack‐free diamond (111) films with a thickness of more than 100 µm by CVD . However, it was found that the CVD‐grown diamond (111) surfaces were rough and exhibited many hillocks.…”

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

“…23 Based on this approach, high-quality diamond films with thickness as high as 100 lm can be grown on a (111) surface. 24 The key parameter is to ensure that growth is inhibited in the [100] direction with respect to the [111] direction. The diamond sample shown in Fig.…”