2014
DOI: 10.1016/j.diamond.2013.11.002
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High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates

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Cited by 48 publications
(37 citation statements)
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“…The extremely narrow range of optimal growth conditions required [21,22] leads to low growth rates (a few μm/h at most) and make it difficult to tune NV density in the layers. Moreover high residual stress can be responsible for crack formation and strong background blue luminescence is usually observed.…”
Section: Introductionmentioning
confidence: 99%
“…The extremely narrow range of optimal growth conditions required [21,22] leads to low growth rates (a few μm/h at most) and make it difficult to tune NV density in the layers. Moreover high residual stress can be responsible for crack formation and strong background blue luminescence is usually observed.…”
Section: Introductionmentioning
confidence: 99%
“…Actually, CVD‐grown diamond (100) substrates are commercially available, while the (111) substrates are not. Recently, Tallaire et al reported the growth of crack‐free diamond (111) films with a thickness of more than 100 µm by CVD . However, it was found that the CVD‐grown diamond (111) surfaces were rough and exhibited many hillocks.…”
Section: Introductionmentioning
confidence: 99%
“…23 Based on this approach, high-quality diamond films with thickness as high as 100 lm can be grown on a (111) surface. 24 The key parameter is to ensure that growth is inhibited in the [100] direction with respect to the [111] direction. The diamond sample shown in Fig.…”
mentioning
confidence: 99%