High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production

Müller, Stephan; Brady, M.F.; Brixius, W.H.; Fechko, G.; Glass, R. C.; Henshall, D.; Hobgood, H. McD.; Jenny, Jason R.; Leonard, Robert L.; Malta, Dean; Powell, Adrian R.; Tsvetkov, V. F.; Allen, Scott T.; Palmour, John W.; Carter, Calvin H.

doi:10.4028/www.scientific.net/msf.389-393.23

Cited by 44 publications

(5 citation statements)

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“…7) which is compatible with a uniform nitrogen profile along the epitaxial layer as observed by SIMS on standard samples. The layer deposited on the third wafer previously doped at 10 15 at/cm 3 exhibits a doping level in the range 10 17 -3 Â 10 17 at/cm 3 is etched at the same time as Si and C on the surface of the two first wafers and that it is significantly incorporated in the last wafer deposit. The doping level measured on the third wafer is roughly ten times lower than the first two wafers.…”

Section: Doping Experimentsmentioning

confidence: 99%

“…Wide band gap materials such as silicon carbide and III-nitrides have properties which make them attractive for high power, high frequency, high temperature devices [1,2]. The increasing interest in SiC is related to the availability of commercial substrates of ever increasing diameter and quality [3] the development of epitaxial growth techniques [4]. For instance, one of the main obstacles to reach a larger production for SiC devices is to control the residual defects in the bulk material and to understand how they affect the device behavior [5,6].…”

Section: Introductionmentioning

confidence: 99%

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Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

Mézière

Ucar

Blanquet

et al. 2004

Journal of Crystal Growth

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Section: Doping Experimentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

Mézière

Ucar

Blanquet

et al. 2004

Journal of Crystal Growth

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“…Various physical characterization techniques have shown that structural defects would be created in the epilayers during the operation. Encouragingly, Cree researchers have reported [13] that a process modification, which suppresses this degradation phenomenon, has been found but they have not released any details. Tsunenobu Kimoto et al have reported 15 kV SiC PiN diodes with various junction terminal technologies [14].…”

Section: Silicon Carbide Pin Diodes (Pin)mentioning

confidence: 99%

Novel Developments and Challenges for the SiC Power Devices

Yang¹,

Duan²,

Yuan³

et al. 2015

Advanced Silicon Carbide Devices and Processing

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Silicon Carbide SiC is believed to be a revolutionary semiconductor material for power devices of the future many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent developments of SiC power devices are discussed. The first part is focused on SiC power diodes including SiC Schottky barrier diode S"D , SiC PiN diodes PiN, SiC junction/ Schottky diodes J"S , then SiC UMOSFETs, DMOSFETs and several MESFETs are introduced, and the third part is about SiC bipolar devices such as "JT and IG"T.Finally, the challenges during the development of SiC power devices, especially about its material growth and packaging are discussed.

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“…This is reflected in the attainment of micropipe densities as low as 0.9 cm −2 for a 2-inch 4H (N-doped) wafer and 22 cm −2 for a 3-inch 4H (N-doped) wafer [62]. The density of the threading dislocations is commonly determined by using hot KOH etching and is in the range of 10 3 -10 4 cm −2 [63].…”

Section: Growth-related Defectsmentioning

confidence: 99%