Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

Mézière, Jérôme; Ucar, Magali; Blanquet, Elisabeth; Pons, M.; Ferret, P.; Cioccio, L. Di

doi:10.1016/j.jcrysgro.2004.04.038

Cited by 58 publications

(74 citation statements)

References 25 publications

(33 reference statements)

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“…The etching effect of hydrogen does have a significant influence on the growth rate profile, as shown by several authors [1,2,3]. Etching of the deposited layer will move some material further downstream, and thereby flatten out the deposition profile somewhat.…”

Section: Resultsmentioning

confidence: 91%

“…This simple surface reaction model is based on sticking probabilities, which have been used with some success in previous works to predict growth rates in silicon limited growth regimes [1,2]. It should be noted, however, that the choice of surface reaction model will have a significant impact on the resulting deposition rates, and therefore only relative values will be presented here.…”

Section: Model Setupmentioning

confidence: 99%

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Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Danielsson

Sukkaew

Yazdanfar

et al. 2013

MSF

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Abstract. Numerical simulations are one way to obtain a better and more detailed understanding of the chemical vapor deposition process of silicon carbide. Although several attempts have been made in this area during the past ten years, there is still no general model valid for any range of process parameters and choice of precursors, that can be used to control the growth process, and to optimize growth equipment design. In this paper a first step towards such a model is taken. Here, mainly the hydrocarbon chemistry is studied by a detailed gas-phase reaction model, and comparison is made between C 3 H 8 and CH 4 as carbon precursor. The results indicate that experimental differences, which previous models have been unable to predict, may be explained by the new model.

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Section: Resultsmentioning

confidence: 91%

Section: Model Setupmentioning

confidence: 99%

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Danielsson

Sukkaew

Yazdanfar

et al. 2013

MSF

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“…Usage of CFD ranges from designing of reactor geometry to process control. CFD studies of SiC CVD were reported in Ref 38,[41][42][43] .…”

Section: Present Status Of Sic-cvd Process Modelingmentioning

confidence: 99%

“…The methods for solving the mass and heat transport equations are well developed and the calculations are reliable 38,42 . The chemical reactions occurring during CVD can be divided into a gas-phase part and a surface part.…”

Section: Present Status Of Sic-cvd Process Modelingmentioning

confidence: 99%

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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SiC is a wide bandgap semiconductor with many attractive properties. It has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness. Typically, SiC homoepitaxial layers are grown using the chemical vapor deposition (CVD) technique. Experimental studies of SiC CVD have been limited to post-process measuring of the layer rather than in situ measurements. In most cases, the observations are presented in terms of input conditions rather than in terms of the unknown growth condition near the surface. This makes it difficult to really understand the underlying mechanism of what causes the features observed experimentally. With help of computational methods such as computational fluid dynamic (CFD) we can now explore various variables that are usually not possible to measure. CFD modeling of SiC CVD, however, requires inputs such as thermochemical properties and chemical reactions, which in many cases are not known. In this thesis, we use quantum chemical calculations to provide the missing details complementary to CFD modeling.We first determine the thermochemical properties of the halides and halohydrides of Si and C species, SiHnXm and CHnXm, for X being F, Cl and Br which were shown to be reliable compared to the available experimental and/or theoretical data. In the study of gas-phase kinetics, we combine ab initio methods and DFTs with conventional transition state theory to derive kinetic parameters for gas phase reactions related to Si-H-X species. Lastly, we study surface adsorptions related to SiC-CVD such as adsorptions of small C-H and Si-H-X species, and in the case of C-H adsorption, the study was extended to include subsequent surface reactions where stable surface products may be formed. iv SammanfattningSiC är ett halvledarmaterial med stort bandgap som har många attraktiva egenskaper. Det har fått särskilt mycket uppmärksamhet inom kraftkomponenter och sensorer, men också för tillämpningar inom biomedicin och biosensorer. Detta beror på materialets stora bandgap, förmågan att klara höga elektriska fält, goda värmeledningsförmåga och kemiska stabilitet. Epitaxiska skikt av SiC för kommersiella tillämpningar tillverkas med hjälp av kemisk ångdepo-sition (Chemical Vapor Deposition, CVD). Experimentella studier av SiC CVD begränsas till mätningar som görs i efterhand, snarare än under processens gång. För det mesta görs observationer med utgångspunkt från processens ingångsvärden istället för från de okända tillväxtförhållandena vid ytan. Detta gör det svårt att verkligen förstå de underliggande mekanismerna för de observerade experimentella resultaten. Med hjälp av beräkningsmetoder, såsom computational fluid dynamics (CFD) kan vi utforska olika variabler som vanligtvis inte går att mäta. Dock kräver CFD-modellering av SiC CVD ingångs-data i form av termokemiska egenskaper och kemiska reaktion...

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“…For instance, in this tubular isothermal CVD reactor, a simple 1D model has been used previously to optimize the thickness uniformity of Ni films [27]. Obviously, more complex 2D and 3D simulations of SiC growth could be applied for a complete understanding of the process as reported for a horizontal hot-wall CVD reactor using SiH 4 /C 3 H 8 as precursors [28]. In this objective, a key point is the knowledge of the chemical mechanisms and kinetics of the process.…”

Section: Comparison Of Pure Dsb and Pse Precursorsmentioning

confidence: 99%

SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

Boisselier

Maury

Schuster

2013

Surface and Coatings Technology

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Frédéric Schuster. SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors. Surface and Coatings Technology, Elsevier, 2013, vol. 215, pp. 152-160. 10.1016/j.surfcoat.2012 SiC coatings have been grown by direct liquid injection of organosilanes in a hot-wall chemical vapor deposition reactor (DLICVD). 1,3-disilabutane (DSB) and polysilaethylene (PSE) were used as single-source precursors. Amorphous and stoichiometric SiC coatings were deposited under low pressure on various substrates in the temperature range of 923-1073 K. Thickness gradients due to the temperature profiles and the precursor depletion were observed along the reactor axis but the thickness uniformity could be improved as a function of the deposition conditions. Growth rates as high as 90 μm·h −1 were obtained using pure precursors. The injection of PSE solutions in toluene significantly reduces the deposition rate due to the decrease of the PSE mole fraction but allows a better control of the growth rates and the microstructure of coatings. They exhibit a smooth surface morphology and a very dense structure. The films grown using pure precursors exhibit an Si:C atomic ratio equal to 1:1 while those using toluene solutions are slightly C-rich (54 at.% C). The presence of solvent vapor in the CVD reactor becomes a source of carbon contamination at deposition temperatures equal to or higher than 1073 K. The influence of the growth conditions is discussed, in particular the presence of toluene vapor.

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Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept

Cited by 58 publications

References 25 publications

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

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