2010
DOI: 10.1088/0960-1317/20/7/075037
|View full text |Cite
|
Sign up to set email alerts
|

High quality shadow masks for top contact organic field effect transistors using deep reactive ion etching

Abstract: In this paper, we demonstrate the fabrication of top-contact silicon shadow masks for organic field effect transistors (OFETs) using plasma deep reactive ion etching (DRIE). Over 50 parallel and interdigitated finger contact masks of 30 μm thickness have been created on a single silicon wafer, with lengths spanning from 6.5 to 60 μm and channel widths varying from 1000 to 50 000 μm. Unlike all other mask fabrication techniques to date, these shadow masks are inexpensive, reusable, have nanoscopically sharp edg… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
11
0

Year Published

2011
2011
2019
2019

Publication Types

Select...
6
2

Relationship

3
5

Authors

Journals

citations
Cited by 18 publications
(12 citation statements)
references
References 15 publications
0
11
0
Order By: Relevance
“…While shadow masks can be fabricated and integrated into a device using photolithography (Aljada et al 2010), in our experiment, the shadow mask is only needed for the O 2 plasma treatment, thus a reusable, simple, and cheap mask was preferred. The mask was machined from an aluminum plate using computer numerical control (CNC) micromachining.…”
Section: Methodsmentioning
confidence: 99%
“…While shadow masks can be fabricated and integrated into a device using photolithography (Aljada et al 2010), in our experiment, the shadow mask is only needed for the O 2 plasma treatment, thus a reusable, simple, and cheap mask was preferred. The mask was machined from an aluminum plate using computer numerical control (CNC) micromachining.…”
Section: Methodsmentioning
confidence: 99%
“…20 mg/ml solutions of each dendrimer were made in toluene, and spin-cast at 1500 rpm/60 s forming ~95 nm thick films (film thickness was measured using a DEKTAK 150 profilometer). Top contacts of MoO 3 (15 nm) then Au (30 nm) were vacuum deposited (vacuum = 2 × 10 −6 mbar, rate ~0.4 Å/s) through DRIE shadow masks 20 forming channel lengths L = 50 to 200 µm and channel widths ω = 1000, 2000 and 3000 µm with ω/L = 50 to 400. OFETs were characterized using an Agilent B1500A Semiconductor Devices Analyzer and an SA-6 Semi-Auto Prober.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…While the main advantage of the stencil lithography is its compatibility with variety of materials which can be deposited, it can also offer unique capabilities in patterning on flexible substrates as well as patterning on top of complex 3D structures . Moreover, its resistless nature provides biocompatible environment for many bioapplications …”
mentioning
confidence: 99%