High quality hydrogenated amorphous silicon oxide film and its application in thin film silicon solar cells

Characterisation of intrinsic silicon oxide absorber layers for use in silicon thin film solar cells

“…) is correlated to the widening of the bandgap and the fact that pure silicon oxide has a refractive index of n ≈1.5, which is lower than that of amorphous silicon. The linear increase of the bandgap and decrease of the optical constants with the change of r c was also reported by other groups .…”

Preparation and characterization of p-type hydrogenated amorphous silicon oxide film and its application to solar cell

“…Hydrogenated amorphous silicon oxide (a-SiOx:H) films have been used for solar cell fabrication [1,2] as their characteristics are suitable for wide band gap top cell of a multi-junction solar cell. Depending upon the composition of silicon oxide alloy, its optical gap can be varied in a wide range.…”

Light management of a-SiOx:H thin film solar cells with hydrogen-reduced p+ buffer at TiO2/p-layer interface

“…On the basis of these light managing techniques, the J sc increased from 9.88 to 11.42 mA/cm 2 . This contributed to the remarkable efficiency of 8.15% by maintaining the absorber thickness of 100 nm that is thinner than that used in any other study (120-350 nm) reported to date [12,14,15,30].…”

“…To further the efficiency, we sought to enhance characteristics of the top cell in terms of open circuit voltage (V oc ) and the response at short-wavelength regions by employing intrinsic amorphous silicon oxide (a-SiO x :H) thin films with wide bandgaps. The a-SiO x :H solar cells delivered better V oc than conventional a-Si:H solar cells [11][12][13][14][15]. However, the efficiency itself was relatively lower than that of a-Si:H cells because of low J sc .…”