High-Quality $\hbox{MgO}/\hbox{TiO}_{2}/\hbox{MgO}$  Nanolaminates on p-GaN MOS Capacitor

Lee, Ko-Tao; Chen, Huang-Chin; Gong, Jeng

doi:10.1109/led.2010.2045101

Cited by 15 publications

(1 citation statement)

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“…In an alternative approach, the authors of [70] showed that deposition of an Al metal layer in vacuum using a Knudsen cell onto the air-exposed GaN surface caused interfacial reactions, resulting in the formation of oxide layers including Al 2 O 3 and Ga oxide at the interface. On p-type GaN, Lee et al have investigated two nanolaminate stacks composed of Al 2 O 3 /TiO 2 /Al 2 O 3 and MgO/TiO 2 /MgO [118,119] enabling a higher capacitance density while maintaining low gate leakage. They report that the best performance from both of these stacks is achieved when the GaN surface is treated with aqueous (NH 4 ) 2 S x , and a post metal anneal in N 2 .…”

Section: Gan Mosmentioning

confidence: 99%

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

Long

McIntyre

2012

Materials

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The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS) devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

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Section: Gan Mosmentioning

confidence: 99%