High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

Cheng, Kai; Leys, Maarten; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf

doi:10.1063/1.2928224

Cited by 82 publications

(72 citation statements)

References 25 publications

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“…Build-up of tensile stress can be addressed by the integration of AlN interlayers deposited at low temperatures [2] or the use of an AlGaN buffer layer which results in compressive stress counteracting the tensile stress generated upon cooling in the top GaN layer [3]. In order to reduce dislocation densities, the in-situ deposition of SiN x interlayers has been found to be effective [4].…”

Section: Introductionmentioning

confidence: 99%

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN_xand AlGaN layers

Haeberlen

Zhu

McAleese

et al. 2010

J. Phys.: Conf. Ser.

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Section: Introductionmentioning

confidence: 99%

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN_xand AlGaN layers

Haeberlen

Zhu

McAleese

et al. 2010

J. Phys.: Conf. Ser.

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“…For the cost aspect, the thermally compromised GaN-on-Si epitaxial platform has been anticipated to provide a good ratio of performance over cost for low-power microwave devices [14]. Plenty efforts have been poured into the strain engineering and the growth optimization to overcome the large differences in lattice constants, and thermal expansion coefficients between GaN and Si, improving the crystalline quality of GaNbased epitaxial structures [15] [16]. Now good-quality GaN can be realized on Si substrates [17] and the development is moving forward to the growth on large-size wafers (≥150 mm) [18].…”

Section: Pappermentioning

confidence: 99%

MOCVD growth of GaN-based high electron mobility transistor structures

Chen¹

2015

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IICover: surface morphology of a GaN high electron mobility transistor structure grown on a native GaN substrate. The image was obtained with an atomic force microscope. AbstractWide bandgap group-III nitride semiconductors like GaN, AlN, and their alloys are very suitable for the use in high-power, high-frequency electronics, as a result of their superior intrinsic properties. The polarization-induced high-density and high-mobility two-dimensional electron gas (2DEG) forming in (0001) oriented AlGaN/GaN heterostructures enable the epitaxial structure to be utilized for high electron mobility transistors (HEMTs). Outstanding power handling and record high frequency have been demonstrated from GaN-based HEMT devices over time. However, the shortterm stability and the long-term reliability of the device performances remain problematic. In order to make GaN HEMT technology truly take off and breach the civilian market like automotive, telecommunication applications, the problems need to be solved to justify its relatively high cost over the solutions based on Si and GaAs technologies.At the material level, there are two major challenges; one is the reduction of highdensity structural defects in heteroepitaxially grown layers when foreign substrates are used, and the other is the control of "deep" electron traps forming in the middle of the "wide" bandgap by intrinsic defects or extrinsic impurities.The main idea of the present work was therefore to tackle these material issues directly, using an approach called bottom-to-top optimization to improve the overall quality of GaN-based HEMT epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. Great effort was put to gain the understanding of the influence of growth parameters on material properties and consequently to establish an advanced and reproducible growth process. Many state-of-the-art material properties of GaNbased HEMT structures were achieved in this work, including superior structural integrity of AlN nucleation layers for ultra-low thermal boundary resistance, excellent control of residual impurities, outstanding and nearly-perfect crystalline quality of GaN epilayers grown on SiC and native GaN substrates, respectively, and record-high room temperature 2DEG mobility obtained in simple AlGaN/GaN heterostructures.The epitaxial growth of the wide bandgap III-nitride epilayers like GaN, AlN, AlGaN, and InAlN, as well as various GaN-based HEMT structures was all carried out in a hot-wall metalorganic chemical vapor deposition (MOCVD) system. A variety of structural and electrical characterizations were routinely used to provide fast feedback VI for adjusting growth parameters and developing improved growth processes, such as optical microscopy (OM), atomic force microscopy (AFM), x-ray diffraction (XRD), capacitance-voltage measurement (CV) as well as sheet resistance...

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“…Despite the claim of record high sheet carrier density and mobility, the degradation of 2DEG properties are influenced by crystalline quality of AlGaN/GaN layers in which threading dislocations propagate from the underlying buffer and substrate interface during growth. 3 Various innovative growth techniques aimed to improve the quality of GaN were adopted, including a low-temperature AlN intermediate layer, 4 GaN/AlN strained layer superlattices (SLS), 5,6 and step graded AlGaN buffer layers, 7 which has led to the growth of crack-free GaN films of thickness exceeding 2 µm. However, critical reliability issues for GaN on Si substrate still remain related to the material quality such as post growth residual stress, threading dislocation densities, high background carrier concentration etc.…”

Section: Introductionmentioning

confidence: 99%

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

2014

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The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

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High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

Cited by 82 publications

References 25 publications

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN_xand AlGaN layers

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN_xand AlGaN layers

MOCVD growth of GaN-based high electron mobility transistor structures

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

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High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

Cited by 82 publications

References 25 publications

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers

MOCVD growth of GaN-based high electron mobility transistor structures

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

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Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN_xand AlGaN layers

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN_xand AlGaN layers