High quality GaN grown by MOVPE

Beaumont, B.; Vaille, M.; Boufaden, T.; Jani, B. El; Gibart, P.

doi:10.1016/s0022-0248(96)00635-5

Cited by 74 publications

(30 citation statements)

References 17 publications

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“…Our devices consist of non-intentionally-doped wurtzite GaN epitaxial layers grown on sapphire by MOVPE [12] and on Si(111) substrates by gas-source MBE [13]. AlN buffer layers were used in both cases.…”

Section: Devices and Experimentalmentioning

confidence: 99%

Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors

Monroy

Garrido

Muñoz

et al. 1997

MRS Internet j. nitride semicond. res.

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In this work high gain GaN photoconductive UV detectors have been fabricated and characterized, and a novel gain mechanism, dominant in these detectors, is described. DC responsivities higher than 10 3 A/W have been measured for an incident power of lW/m 2 at room temperature. The photoconductive gain depends directly on the bias voltage and scales with incident power as P -k (k ≈ 0.9) for more than five decades. A decrease of both gain and k parameter with temperature has also been observed. As a consequence of the slow non-exponential transient response, AC gain measurements result in lower values for gain and k parameter, which are frequency dependent. The high responsivity, non-linear behavior and slow non-exponential transient response, are all modeled taking into account a modulation mechanism of the layer conductive volume. Such spatial modulation is due to the photovoltaic response of the potential barriers related to the surface and charged dislocations arrays.

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Section: Devices and Experimentalmentioning

confidence: 99%

Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors

Monroy

Garrido

Muñoz

et al. 1997

MRS Internet j. nitride semicond. res.

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show abstract

“…The growth, using this apparatus, is real time monitored by laser beam reflectivity [6,10,11]. As an example a typical recording of the reflectivity signal during the growth of successive GaN epitaxial layers for different filament temperatures (T f ) is shown in the inset of Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In order to enhance the decomposition rate of nitrogen precursors and achieve high NH x radical concentrations, several techniques of precracking nitrogen and ammonia are developed and adopted to MOVPE and molecular beam epitaxy (MBE) apparatuses. The growth rates remain low and the ratio of atomic nitrogen to N 2 in the plasma does not exceed 1% [6]. The epilayers obtained from activated nitrogen precursors did not compete with those from conventional thermally cracked ammonia [6].…”

Section: Introductionmentioning

confidence: 93%

“…The growth rates remain low and the ratio of atomic nitrogen to N 2 in the plasma does not exceed 1% [6]. The epilayers obtained from activated nitrogen precursors did not compete with those from conventional thermally cracked ammonia [6]. Another technique based on a hot tungsten filament has been successfully used for NH 3 decomposition and high AlN growth rates were obtained by Dupuie and Gulari [7] in an LP-MOVPE reactor.…”

Section: Introductionmentioning

confidence: 99%

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