High Quality GaN Grown by Facet-Controlled ELO (FACELO) Technique

Abstract

We fabricated high‐quality GaN by low‐pressure metalorganic vapour phase epitaxy (LP‐MOVPE) using Facet Controlled Epitaxial Lateral Overgrowth (FACELO) technique. Density and distribution of threading dislocations (TDs) in the GaN epitaxial layer strongly depended on the ELO mask and window widths, and were related to facet structures during the ELO process. It was found that tilt and twist of c‐axis in the FACELO GaN were very small. Low temperature cathodo‐luminescence (CL) spectra of the FACELO GaN with low TD density exhibited excellent crystallographic quality.

Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

“…Over the years, several useful methods have been employed for the growth of epitaxial GaN with improved crystalline quality. Techniques like epitaxial lateral overgrowth (ELOG) [9], pendeo-epitaxy (PE) [4], facet-controlled epitaxial lateral overgrowth (FACELO) [10], patterning of substrates [11,12], multistage growth [13,14], etc. have been shown to be very promising in diminishing the effect of the large dislocation densities that are commonly found in conventionally grown epitaxial GaN layers.…”

MOVPE growth of Ga 3D structures for fabrication of GaN materials

“…Great effort has been devoted to develop the (Ga, Al, In)N family, to improve the crystal quality and, consequently, improve the devices' performances [3]. Many of these improvements are closely related to the substrate and the growth/ regrowth conditions [1][2][3][4].…”

Defect reduction in gallium nitride using cantilever epitaxy.

“…As was seen in the earliest cantilever epitaxy work and in Facet Controlled ELO (FACELO) research [9,16,17] VTDs turn and run horizontally when they encounter a free faceted face. This can be seen in ELO pyramids and near the edges of large cantilever posts.…”