High-Quality Film Bulk Acoustic Resonators Fabricated on AlN Films Grown by a New Two-Step Method

Yi, Xinyan; Li, Zhao; Ouyang, Peidong; Liu, Hongbin; Zhang, Tielin; Li, Guoqiang

doi:10.1109/led.2022.3164972

Cited by 25 publications

(11 citation statements)

References 28 publications

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“…The XRC-results of samples PVD-AlN/Si(111) @100 • C, PVD-AlN/Si(111) @650 • C, MOCVD N-AlN and PVD-AlN/N-AlN are presented in figure 2. As shown in figure 2(a), the RC(002)-FWHM of the sample PVD AlN/Si(111)@650 • C is 1.62 • , which is in agreement with the commonly observed value in as sputtered AlN on (111) silicon substrate [27]. When compared with the sample sputtered at 650 • C, the 100 • C-sputtered AlN presents even ignorable RC-diffraction signal, which indicates the terrible crystallinity of AlN.…”

Section: Resultssupporting

confidence: 87%

“…After the sputtering, the post-annealing operation also works according to previous reports [23,24]. In addition to the above-mentioned ways, two-step method is also useful and popularly used to improve the quality of sputtered AlN and even corresponded device [25][26][27]. However, it is commonly accepted that the growth at high temperature is a simple way to improve the AlN quality.…”

Section: Introductionmentioning

confidence: 99%

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Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Luo,

Yuan,

Liang

et al. 2024

Semicond. Sci. Technol.

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Preparing high-quality AlN films at low temperatures is always highly demanded in plenty of application-fields, despite the high temperature is always necessary to enable the AlN crystallization. Therefore, improving the structural properties at low temperature is still challenging in the field. In the present work, the metal organic chemical vapor deposition (MOCVD) grown AlN nucleation layer is employed to improve the crystallinity and morphology of sputtered AlN on 6-inch Si (111) substrate at the temperature even as low as 100℃ where it is not principally possible to achieve the crystallization of sputtered AlN. When compared with the as-sputtered AlN prepared even at 650℃, it is found that the full width at half maximum (FWHM) of AlN (002) X-ray rocking curves is intensively decreased to 0.96° from 1.61°, and such a reduction indicates that the screw dislocation density is decreased from 7.31×1010 down to 2.14×1010/cm2. In addition to the crystallinity, the morphology is also obviously improved that the root-mean-square (RMS) roughness is reduced from 4.99 nm down to 0.83 nm in a scanned area of 3×3 μm2 through introducing AlN nucleation. Therefore, such a combination highlights the contribution of AlN nucleation grown by MOCVD in improving the structural properties of low-temperature sputtered AlN layer which is compatible with the manufacturing of Si integrated circuits.

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Section: Resultssupporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Luo,

Yuan,

Liang

et al. 2024

Semicond. Sci. Technol.

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“…The thin AlN film was prepared on 4-in. high-resistance single-crystal Si(III) via the physical vapor deposition (PVD) method . The silicon substrate was immersed in acetone, isoacetone, a buffered oxide etch (BOE) solution, and deionized (DI) water to remove the oxides and impurities via bath ultrasonication.…”

Section: Methodsmentioning

confidence: 99%

“…high-resistance single-crystal Si(III) via the physical vapor deposition (PVD) method. 30 The silicon substrate was immersed in acetone, isoacetone, a buffered oxide etch (BOE) solution, and deionized (DI) water to remove the oxides and impurities via bath ultrasonication. The Si substrate was then loaded into the jam tray and sent to the load chamber, and the robotic arm sent the substrate into the chamber.…”

Section: Fabrication Of the Pdms/aln Composite Film The Thinmentioning

confidence: 99%

Piezoelectric PDMS/AlN Film for Osteogenesis in Vitro

Tang

et al. 2023

ACS Biomater. Sci. Eng.

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Bone defect and nonunion are complex diseases which are difficult to treat due to insufficient bone regeneration. Electrical stimulation has attracted attention as a promising strategy to induce and enhance bone regeneration. Self-powered and biocompatible materials have been widely explored and used in biomedical devices, owing to their ability to produce electrical stimulation without an external power source. We aimed to prepare a piezoelectric polydimethylsiloxane (PDMS)/aluminum nitride (AlN) film with excellent biocompatibility and osteoconductive ability for the growth of murine calvarial preosteoblast MC3T3-E1 cells. By applying vibration to stimulate body movement, the PDMS/ AlN film demonstrated a current density of 2−6 μA cm −2 , and the generated continuous alternating current (AC) effectively promoted MC3T3-E1 cell growth, viability, and osteoblastic related gene expression (genes runt-related transcription factor 2 [RUNX2], osteocalcin [OCN], alkaline phosphatase [ALP]) and exhibited higher mineralization. Compared to blank plates and nonvibrated PDMS/AlN films, the vibrated PDMS/AlN film showed rapid and superior osteogenic differentiation. The design of the biocompatible and flexible piezoelectric PDMS/AlN film overcame the poor processability, brittleness, and instability of electrical stimulation of traditional electroactive materials, demonstrating great potential in the application of electrical stimulation for bone tissue engineering.

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“…In 1995, Vispute et al [81] reported that single crystal AlN thin films had been grown epitaxially on Si substrates by pulsed laser ablation of sintered AlN targets for the first time. In 2010, Li et al reported the epitaxial growth of high-quality AlN films by PLD, including insight into the effect of distance between the target and Si substrates on the quality of epitaxial AlN films [82], the AlN epitaxial growth mechanism by PLD [83], AlN/Si interfacial reaction inhibition [84], the AlN stress regulation mechanism [85], and the high crystal quality uniformity AlN layer grown on large-size Si substrates [86,87]. In this study, high-quality AlN films were grown on Si substrates by PLD.…”

Section: Aluminium Nitride (Aln) Nucleation Layermentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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High-Quality Film Bulk Acoustic Resonators Fabricated on AlN Films Grown by a New Two-Step Method

Cited by 25 publications

References 28 publications

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Piezoelectric PDMS/AlN Film for Osteogenesis in Vitro

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

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