High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

Yasutake, Kiyoshi; Ohmi, Hiromasa; Kirihata, Y.; Kakiuchi, Hiroaki

doi:10.1016/j.tsf.2008.08.016

Cited by 15 publications

(9 citation statements)

References 11 publications

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“…The substrate was situated on the susceptor of a horizontally movable substrate heating stage, and fixed by means of a vacuum chuck system in the reaction chamber. The temperature of the back surface of the substrate was maintained at a level almost equal to that of the susceptor during deposition, due to the vacuum chuck system [16]. By supplying a 150 MHz VHF electric power through a matching circuit, Hebase AP plasma was homogeneously generated in the narrow gap region between the electrode and the substrate.…”

Section: Methodsmentioning

confidence: 99%

Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120 °C) thin film transistors

Kakiuchi¹,

Ohmi²,

Yasutake³

2020

J. Phys. D: Appl. Phys.

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With the aim of improving silicon (Si) film quality deposited by atmospheric-pressure (AP) plasma-enhanced chemical vapor deposition at a low substrate temperature of 120 °C, we examine the difference between continuous wave and pulsed plasmas for deposition characteristics depending on H2 and SiH4 flow rates and inpur VHF power. A specifically designed parallel-plate-type electrode system is used to generate the AP plasma, which is excited by 150 MHz very high-frequency (VHF) electric power. Hydrogen and monosilane diluted with helium are used as the process gases. The electrode system enables us to form turbulence-free one-dimensional gas flow in the plasma zone, thereby ensuring a deposition process without contamination of the substrate surface with dust particles. The electrical property of the deposited Si layers was evaluated by fabricating bottom-gate thin film transistors (TFTs). The performance of the bottom-gate TFTs revealed that the a-Si TFTs, i.e. those channel layers prepared with a pulse duty cycle of 10%, exhibit reasonably high field effect mobilities of around 1 cm2 · V–1 · s–1, suggesting that the pulse modulation of input VHF power is highly effective in achieving a plasma chemistry suitable for high-quality Si growths at low temperatures.

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Section: Methodsmentioning

confidence: 99%

Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120 °C) thin film transistors

Kakiuchi¹,

Ohmi²,

Yasutake³

2020

J. Phys. D: Appl. Phys.

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“…Instead, we measured the temperature of the copper susceptor with a thermocouple embedded in the susceptor and maintained the temperature constant by regulating heater current. Because the efficiency of heat transfer across the substrate/susceptor interface was sufficiently high by virtue of the vacuum chuck system [13], the susceptor temperature was considered to be almost equal to the temperature of the back surface of substrate (T sub ). This enabled us to estimate T surf adequately from the heat flux from the plasma, the thermal conductivity of the substrate material and T sub by carrying out timedependent simulations on temperature distributions around the plasma region using the PHOENICS software, which is a general-purpose three-dimensional numerical simulator for flow and heat transfer [14][15][16].…”

Section: Methodsmentioning

confidence: 99%

Characterization of microcrystalline Si films deposited at low temperatures with high rates by atmospheric‐pressure plasma CVD

Ouchi

Tabuchi

Ohmi

et al. 2010

Phys. Status Solidi (c)

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Low‐temperature and high‐rate depositions of hydrogenated microcrystalline silicon (μc ‐Si:H) films are investigated using stable plasma excited at atmospheric pressure (AP) by supplying 150‐MHz very high‐frequency (VHF) power. VHF power density, H2/SiH4 ratio and plasma gap are varied as parameters under a fixed substrate temperature (Tsub) of 220 ΩC. Increasing VHF power density and H2/SiH4 ratio is primarily important for the sufficient decomposition of source gas molecules, improving both deposition rate and film property. In addition, the plasma gap is found to be another crucial parameter in the deposition process using AP‐VHF plasma. Numerical analyses on the temperature distribution around the plasma region have revealed that the steady‐state surface temperature of the glass substrate becomes approximately 100 ΩC higher than the back surface temperature (Tsub), which is caused by the moderate surface heating effect of the AP‐VHF plasma. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The AP-PCVD system and conditions for Si epitaxial growth are the same as those described in our previous reports (8)(9)(10)(11). Figure 1(a) shows a schematic illustration of the porous carbon electrode for generation of AP-plasma employed in this study.…”

Section: Methodsmentioning

confidence: 99%

In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD

Ohnishi

Kirihata²,

Ohmi³

et al. 2009

ECS Trans.

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We have investigated characteristics of in situ B-doped and selective Si epitaxial growth by atmospheric-pressure plasma chemical vapor deposition (AP-PCVD) at VHF frequency. Using B 2 H 6 as a doping gas, defect-free in situ B-doped epitaxial Si films were grown by AP-PCVD at 570ºC. A high carrier concentration up to 10 20 cm -3 was achieved at a high growth rate of 0.20 µm/min. The hole mobility of highly B doped Si films is the same as that of bulk Si single crystals, demonstrating that the electrical quality of AP-PCVD Si film is high enough for semiconductor device applications. Si selective epitaxial growth by AP-PCVD has also been studied using atomic hydrogen as etchant species. Highly selective epitaxial growth of Si with good film quality has been observed at 470ºC by increasing H 2 gas concentration in the plasma.

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High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

Cited by 15 publications

References 11 publications

Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120 °C) thin film transistors

Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120 °C) thin film transistors

Characterization of microcrystalline Si films deposited at low temperatures with high rates by atmospheric‐pressure plasma CVD

In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD

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