In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD

Abstract

We have investigated characteristics of in situ B-doped and selective Si epitaxial growth by atmospheric-pressure plasma chemical vapor deposition (AP-PCVD) at VHF frequency. Using B 2 H 6 as a doping gas, defect-free in situ B-doped epitaxial Si films were grown by AP-PCVD at 570ºC. A high carrier concentration up to 10 20 cm -3 was achieved at a high growth rate of 0.20 µm/min. The hole mobility of highly B doped Si films is the same as that of bulk Si single crystals, demonstrating that the electrical quality of AP-PCVD Si film is high enough for semiconductor device applications. Si selective epitaxial growth by AP-PCVD has also been studied using atomic hydrogen as etchant species. Highly selective epitaxial growth of Si with good film quality has been observed at 470ºC by increasing H 2 gas concentration in the plasma.

Selective Boron Elimination from B2H6–SiH4Gas Mixtures for Purifying Si

“…The B contamination originated from the residue of the previous p-type Si film preparation experiments. 58 When the filter temperature is set at 500 • C, the B concentration in the Si film can be reduced to about 1/3000 of the non-filtered B concentration by a single elimination process. Generally, using the one-directional solidification method as the metallurgical purification method, the B concentration can be reduced to at most a third of the initial concentration because the segregation coefficient of B in Si is 0.8.…”

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

“…In the next-generation semiconductor device technology, the development of a low-temperature selective epitaxial growth (SEG) process is desirable for fabricating an advanced miniature device structure without inter-diffusion of dopant atoms [86][87][88]. In the SEG process, it is important to increase the incubation time for Si crystal nucleation on SiO 2 .…”