High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI

Quémerais, Thomas; Gloria, D.; Golanski, Dominique; Bouvot, Simon

doi:10.1109/led.2014.2378313

Cited by 25 publications

(15 citation statements)

References 9 publications

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“…This is because even advanced CMOS varactors are typically limited by their series resistance to frequencies below 100 GHz. 120 In the optical range, approaches such as thermo-optical tuning 121 and electro-optic modulators 122 are generally preferred for active phase control. To date there has been no demonstration of an electronically controlled phase modulator in the terahertz range that is amenable to integration with a phased array of this type.…”

Section: Phased Arraysmentioning

confidence: 99%

Tutorial: Terahertz beamforming, from concepts to realizations

et al. 2018

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The terahertz range possesses significant untapped potential for applications including high-volume wireless communications, noninvasive medical imaging, sensing, and safe security screening. However, due to the unique characteristics and constraints of terahertz waves, the vast majority of these applications are entirely dependent upon the availability of beam control techniques. Thus, the development of advanced terahertz-range beam control techniques yields a range of useful and unparalleled applications. This article provides an overview and tutorial on terahertz beam control. The underlying principles of wavefront engineering include array antenna theory and diffraction optics, which are drawn from the neighboring microwave and optical regimes, respectively. As both principles are applicable across the electromagnetic spectrum, they are reconciled in this overview. This provides a useful foundation for investigations into beam control in the terahertz range, which lies between microwaves and infrared light. Thereafter, noteworthy experimental demonstrations of beam control in the terahertz range are discussed, and these include geometric optics, phased array devices, leaky-wave antennas, reflectarrays, and transmitarrays. These techniques are compared and contrasted for their suitability in applications of terahertz waves.

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Section: Phased Arraysmentioning

confidence: 99%

Tutorial: Terahertz beamforming, from concepts to realizations

et al. 2018

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“…The voltage dependent MOS capacitance is equivalent of semiconductor and oxide capacitances. Both and are based on the BSIM 4 compact model with specific ST Microelectonics fitting parameters [9]. This model enables to accurately simulate varactors behavior up to millimeter wave frequencies for all geometries.…”

Section: A Silicon-based Modellingmentioning

confidence: 99%

Sub-fF 130 nm MOS Varactor Characterization Using 6.8 GHz Interferometry-Based Reflectometer

Ferreira¹,

Donche²,

Delalin³

et al. 2015

IEEE Microw. Wireless Compon. Lett.

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Nanometer-scaled communication devices for microwave and millimeter wave applications motivated innovative techniques in modeling and characterization. In this letter, an interferometry-based reflectometer (IBR), comprising Vector Network Analyser (VNA) and commercial devices, is implemented. Using sub-fF 130 nm thick-oxide accumulation MOS varactors from ST Microelectronics, IBR and VNA measurements are compared to a silicon-based model. A capacitance from 0.9 to 1.6 fF around 6.8 GHz is estimated. IBR demonstrates a root-mean-squared (RMS) error related to silicon-based model of 60 aF, while VNA has 70 aF in its best case. The mean accuracy is estimated at 40 aF and 11 aF respectively for VNA best case and IBR in C-V measurements. This letter demonstrates that IBR solution has smaller RMS error and better accuracy for C-V measurements than VNA.Index Terms-High-impedance microwave and millimeter wave instrumentation, interferometry-based reflectometer, sub-fF MOS varactor.

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“…In this scenario, the design of novel devices with high tuning range and highfactor is a key issue in the mm-wave frequency bands. For reference, the reported -factor for state-of-the-art varactors in CMOS technologies is around 10 with a tuning ratio ( *+, / */0 ) of 1.4 at 100 GHz [5].…”

Section: Introductionmentioning

confidence: 99%

Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band

Margalef‐Rovira

Saadi

Vincent

et al. 2020

IEEE Trans. Electron Devices

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HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Distributed under a Creative Commons Attribution-NonCommercial| 4.0 International License

show abstract

High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI

Cited by 25 publications

References 9 publications

Tutorial: Terahertz beamforming, from concepts to realizations

Tutorial: Terahertz beamforming, from concepts to realizations

Sub-fF 130 nm MOS Varactor Characterization Using 6.8 GHz Interferometry-Based Reflectometer

Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band

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