High-Q integrated RF passives and micromechanical capacitors on silicon

Beek, van W; Delden, van; Dijken, van; Eerd, van; Grootel, van; Jansman,; Kemmeren,; Rijks,; Steeneken,; Toonder, den Jmj Jaap; Ulenaers,; Lok,; Pulsford,; Straten, van; Teeffelen, van; Coster, de; Puers, Robert

doi:10.1109/bipol.2003.1274955

Cited by 19 publications

(10 citation statements)

References 4 publications

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“…The Q-factor of MEMS inductors can be increased by choosing a low-loss substrate, such as alumina, as reported by Blondy et al . (2007), as well as by reducing the coupling of the inductor windings with the substrate by depositing a good insulating layer in between them (van Beek et al ., 2003). By means of such solutions, improvements of the Q-factor from 5-10 up to 40-70 have been experimentally demonstrated.…”

Section: Rf Mems (Variable) Inductorsmentioning

confidence: 98%

RF MEMS passive components for wireless applications

Iannacci

2013

Handbook of Mems for Wireless and Mobile Applications

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Section: Rf Mems (Variable) Inductorsmentioning

confidence: 98%

RF MEMS passive components for wireless applications

Iannacci

2013

Handbook of Mems for Wireless and Mobile Applications

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“…It has been demonstrated that for this topology the measured third-order distortion, IM3, shows an improvement compared to the traditional single varactor tuning of more than 30 dB [12]. Another example of a more traditional approach is the MEMS capacitor, which in its most popular implementation is able to switch between two fixed capacitance values [15,16]. MEMS capacitors provide a high Q at moderate capacitance values, but they require nonstandard processing, expensive packaging techniques, and high control voltages, and their reliability and switching speed are still poor compared to semiconductor-based solutions [12].…”

Section: Varactorsmentioning

confidence: 99%

Reconfigurable scan‐beam hollow patch reflectarray antenna loaded with tunable capacitor

Hajian

Kuijpers

Buisman

et al. 2008

Micro & Optical Tech Letters

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In this article, the design concept of an active reconfigurable reflectarray antenna has been proposed and tested. The elementary radiators are hollow patch element loaded with varactor‐diode device in which the reflected phase can be varied. This phase alteration is based on the variation of the diode capacitance which can be achieved by varying the biasing voltage of the active varactor device. By activating these varactor devices, the phase of each antenna element in the array configuration can be adopted dynamically, and consequently, its radiation beam direction can be reconfigured. The advantage of the MEMS switches is the complexity of the integration and continuing beam scanning capability. The reflectarray incorporating active elements has been built and tested at 6.0 GHz. Narrow band multifrequency shared aperture is demonstrated theoretically and experimentally. The performance of the proposed active antenna is excellent, which pioneers the design of arbitrarily reconfigurable antennas. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 367–374, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24050

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“…Varieties of variable elements have also been presented for automatic impedance matching technology. Microelectromechanical systems capacitor is a popular implementation, which provides a very high-Q at moderate capacitance values [11,12]. However, it is not compatible with standard complementary metal-oxide-semiconductor (CMOS) processing and requires expensive packaging techniques.…”

Section: Introductionmentioning

confidence: 99%

Adaptive impedance matching system for downlink of passive semi‐ultra wideband ultra‐high frequency radio frequency identification tag

Zhang

Dai

Zhang

et al. 2012

Adaptive Control & Signal

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The input impedance of ultra-high frequency radio frequency identification tag varies with the received power on the chip. It will induce impedance mismatch between the receiver antenna and microchip, thus drastically affect the performance of communication. In this paper, a low cost and fully integrated automatic impedance matching system was presented to solve this problem. It consists of two control loops for independent control of the real and imaginary parts of impedance. The first control loop realizes resistance correction using a parallel LC tuning network, whereas the second control loop achieves reactance compensation using a series LC tuning network. In both loops, the mismatch information is detected for direct control of the variable elements, varactors, which are tuned in a sequential manner. For unambiguous control of the resistance correction, the sign of the intermediate reactance is used as a secondary control criterion to enforce operation into a stable region. The functionality of the proposed automatic matching system was verified for different input impedances of a specifically semi-ultra wideband ultra-high frequency radio frequency identification tag as the available input power varies. The results indicate that all matched impedances are clustered around the target impedance 50 C j 0 after acquisition of both loops.

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High-Q integrated RF passives and micromechanical capacitors on silicon

Cited by 19 publications

References 4 publications

RF MEMS passive components for wireless applications

RF MEMS passive components for wireless applications

Reconfigurable scan‐beam hollow patch reflectarray antenna loaded with tunable capacitor

Adaptive impedance matching system for downlink of passive semi‐ultra wideband ultra‐high frequency radio frequency identification tag

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