High-purity InP layer grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Abstract

High-purity InP layers have been successfully grown by metalorganic chemical vapor deposition (MOCVD) using tertiarybutylphosphine (TBP) as a phosphorus source. The highest quality InP layer, which was grown at a V/III ratio of 36, a growth temperature of 600 °C and a growth pressure of 760 Torr, exhibited electron mobility as high as 167 000 cm2/V s and carrier concentrations as low as 1.8×1014 cm−3 at 77 K. The film quality strongly depended on the silicon content as an impurity in TBP. Electron mobility at 77 K was dependent on the silicon content, changing its value from 10 100 cm2/V s (Si content; 0.8 ppm) to 167 000 cm2/V s (Si content; <0.03 ppm). The low-temperature (4.2 K) optical properties were also affected by silicon content as a impurity. It was found that electron mobility of 167 000 cm2/V s was the highest ever reported for InP grown by MOCVD using TBP as a phosphorus source. The quality of InP grown using TBP was equivalent to that of InP grown using phosphine (PH3).

Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine

“…Imori et al [11] has reported electron mobility data for InP grown with TBP that is slightly better than that reported here. Their value of 167,000 cm 2 / V s was obtained on material grown at a V/III ratio of 36 in an atmospheric pressure MOVPE reactor, using TBP synthesized in Imori's laboratory.…”

Growth of InGaAs(P) in planetary metalorganic vapor phase epitaxy reactor using tertiarybutylarsine and tertiarybutylphosphine for photovoltaic applications

“…The reasons behind this improvement are most likely that a lower growth temperature can prevent TBP predecomposition near the precursor injection nozzle (100% decomposed at 550 °C), and prevent parasitic gas-phase reactions. The optimized temperature for InP growth in the planetary reactor in this work was significantly lower than the optimized temperature generally obtained in small horizontal reactors [16][17][18][19] even though TBP was similarly utilized. This fact is possibly ascribed to the long residence time in a hot zone of a reactor before the precursors supplied from the inlet reach the wafer surface.…”

“…In addition, the V=III ratio of 30 is considerably sufficient for the growth of InP using TBP. 13,14,[16][17][18] In situ reflectance in Fig. 1(c) shows no evidence of rough-ness degradation, and the 2 × 2 µm 2 AFM image in Fig.…”

“…The wafer's surface temperature was controlled to be approximately 590-610 °C, which was a typical temperature range for MOVPE-grown InP using TBP. [16][17][18] Obviously, in Fig. 1(a), the in situ surface reflectance indicates that the surface morphology of InP gradually degraded after a few minutes of epitaxial growth.…”

650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

“…4,5 Compared with PH 3 , TBP has advantages as a P precursor, it is much safer due to the lower vapor pressure and several orders of magnitude lower toxicity, 6 and has lower decomposition temperature, 4 which is useful for suppressing the diffusion of dopants in device structures where an abrupt doping profile is critical to the performance of the devices. Using TBP, high-mobility InP and high-quality semiinsulating InP epilayers have been grown by MOCVD, [7][8][9] also high-quality InGaAsP quantum well long wavelength lasers grown by TBP and tertiarybutylarsine ͑TBAs͒ have been demonstrated. 10,11 However, when it comes to the case of AlGaInP material, although some research groups have used TBP as an alternative source to grow AlGaInP, [12][13][14][15][16] only AlGaInP red-light-emitting diodes have been realized.…”