High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

Abstract

We report on Sn-doped β-Ga2O3 MOSFETs grown by molecular beam epitaxy with as-grown carrier concentrations from 0.7 × 1018 to 1.6 × 1018 cm−3 and a fixed channel thickness of 200 nm. A pulsed current density of >450 mA/mm was achieved on the sample with the lowest sheet resistance and a gate length of 2 μm. Our results are explained using a simple analytical model with a measured gate voltage correction factor based on interface charges that accurately predict the electrical performance for all doping variations.

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in β‐Ga2O3

“…β ‐Ga 2 O 3 is emerging as an excellent ultra‐wide band‐gap semiconductor owing to its superior properties compared to other materials such as GaN, ZnO, and SnO 2 . With a band‐gap in the range from 4.5 to 4.9 eV, a high breakdown field, and a tunable carrier concentration, β ‐Ga 2 O 3 represents an excellent candidate for deep‐UV devices, metal–oxide–semiconductor field effect transistors, and Schottky diodes . Experimentally, n‐type doping of β ‐Ga 2 O 3 has been achieved by various techniques .…”

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2 ¯ 01 $$ \overline{2}01 $$ ) Heterojunctions

“…In addition, β-Ga 2 O 3 has a room temperature bandgap of 4.5~4.9 eV, and excellent chemical stability [3]. Especially, β-Ga 2 O 3 has a high bulk electron mobility of ∼100 cm 2 /V·s, much higher breakdown field of 8 MV/cm than that of SiC (3.18 MV/cm) or GaN (3 MV/cm) [4], and the carrier concentration can be easily modulated by doping Sn and Si [5, 6]. Therefore, β-Ga 2 O 3 -based devices including solar-blind photodetectors [7] and metal-oxide-semiconductor field-effect transistors (MOSFETs) [8] have been reported.…”

Temperature and doping concentration dependence of the energy band gap in β-Ga_2O_3 thin films grown on sapphire

“…The monoclinic β-phase Ga 2 O 3 represents the thermodynamically stable crystal among the known five phases (α, β, γ, δ, ɛ). The breakdown field of β-Ga 2 O 3 is estimated to be 6-8 MV/cm [4], which is about two-three times larger than that of 4H-SiC and GaN. These unique properties make β-Ga 2 O 3 a promising candidate for high power electronic devices [4][5][6] and solar blind photodetectors applications [7][8][9].…”

“…The breakdown field of β-Ga 2 O 3 is estimated to be 6-8 MV/cm [4], which is about two-three times larger than that of 4H-SiC and GaN. These unique properties make β-Ga 2 O 3 a promising candidate for high power electronic devices [4][5][6] and solar blind photodetectors applications [7][8][9]. More advantageously, single crystal β-Ga 2 O 3 substrates can be synthesized by scalable and low cost melting based growth techniques such as edge-defined film-fed growth (EFG) [10], floating zone (FZ) [11] and Czochralski [12] methods.…”