High-Pressure Water Vapor Heat Treatment for Enhancement of SiO_x or SiN_x Passivation Layers of Silicon Solar Cells

Abstract

It is shown that in an array of 'bubble domains', interactions will distort each domain from the circular state. The shape will vary with film thickness in such a way that something approximating to 'honeycomb' domains will be stable at large thicknesses. An estimate of the interaction energy density between domains is obtained from an examination of published results.

Passivation effect of water vapour on thin film polycrystalline Si solar cells

“…Sameshima et al annealed polycrystalline silicon thin film transistors in water vapour to improve their threshold voltage . Ogane et al used water vapour to improve SiN x and SiO x passivation layers for monocrystalline and multicrystalline thin film transistors or solar cells. This work presents for the first time results achieved by annealing of polycrystalline silicon (poly‐Si) thin film solar cells in water vapour.…”

Rectifying performance of p-type tin(II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes

“…SiNW surface passivation is an even more challenging task due to their small size and the fact that multiple facets with different crystalline orientations are exposed. The various surface passivation layers, such as SiO x and -CH 3 , have been used in previous works [24][25][26][27][28][29][30][31][32]. Scanning tunneling microscopy studies have shown that the CH 3 -terminated Si surface is atomically flat and is terminated by close-packed methyl groups [24].…”

“…By applying a controlled in situ passivation of the Si surface with SiO x in the monolayer regime, metallic silicide contaminations at the interface can be effectively reduced down to a sub-monolayer coverage, as was carefully quantified by interface-sensitive hard X-ray photoemission spectroscopy [27]. Ogane et al [28] have proposed high-pressure water vapor heat treatment as a technique for modifying the SiO x passivation layers of silicon solar cells at low temperatures. Zeng and Lin [29] investigated the effect of H 2 O 2 treatment on the electrical and optoelectronic properties of graphene/SiNWs/Si devices.…”