High Pressure Synthesis of New Silicon Sulfides

Silverman, M. S.; Soulen, J. R.

doi:10.1021/ic50023a037

Cited by 23 publications

(25 citation statements)

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“…These tetrahedral units are connected by means of edge‐sharing to form long chains. In 1965 Silverman and Soulen carried out a high pressure experiment for SiS 2 , which revealed a different structure in which the distorted tetrahedral units (SiS 4 ) are corner‐sharing to generate a network 3. Recently, Evers and Schnöckel have discovered two new high‐pressure phases of SiS 2 which possess both edge‐ and corner‐sharing distorted SiS 4 tetrahedra 4.…”

Section: Methodsmentioning

confidence: 99%

“…In 1965 Silverman and Soulen carried out ah igh pressure experiment for SiS 2 ,which revealed ad ifferent structure in which the distorted tetrahedral units (SiS 4 )a re corner-sharing to generate an etwork. [3] Recently,E vers andS chnçckel have discoveredt wo new high-pressure phases of SiS 2 which possess both edge-and corner-sharing distorted SiS 4 tetrahedra. [4] All the reporteds tructures of SiS 2 are polymericb yn ature.A monomeric form of SiS 2 was detected in am atrix at very low temperature by Schnçckel in 1989.…”

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confidence: 99%

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A Stable Dimer of SiS₂ Arranged between Two Carbene Molecules

Mohapatra

Mondal

Samuel

et al. 2015

Chemistry A European J

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The Me-cAAC:-stabilized dimer of silicon disulfide (SiS2 ) has been isolated in the molecular form as (Me-cAAC:)2 Si2 S4 (2) at room temperature [Me-cAAC:=cyclic alkyl(amino) carbene]. Compound 2 has been synthesized from the reaction of (Me-cAAC:)2 Si2 with elemental sulfur in a 1:4 molar ratio under oxidative addition. This is the smallest molecular unit of silicon disulfide characterized by X-ray crystallography, electron ionization mass spectrometry, and NMR spectroscopy. Structures with three sulfur atoms arranged around a silicon atom are known; however, 2 is the first structurally characterized silicon-sulfur compound containing one terminal and two bridging sulfur atoms at each silicon atom. Compound 2 shows no decomposition after storing for three months in an inert atmosphere at ambient temperature. The bonding of 2 has been further studied by theoretical calculations.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

A Stable Dimer of SiS₂ Arranged between Two Carbene Molecules

Mohapatra

Mondal

Samuel

et al. 2015

Chemistry A European J

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“…Limited to relatively low pressures, the structural evolution of SiS 2 has also been accurately described32. The ambient-pressure stable phase known as NP-SiS 2 has orthorhombic Ibam structure and consists of distorted edge-sharing tetrahedra forming 1D chains which interact via weak van der Waals forces323334353637383940. At 2.8 GPa, a first high-pressure phase HP1-SiS 2 3236 appears, with monoclinic space group P 2 1 / c , by interconnection of the NP-SiS 2 chains to form 2D layers32.…”

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confidence: 99%

Creating new layered structures at high pressures: SiS2

Plašienka

Martoňák

Tosatti

2016

Sci Rep

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Old and novel layered structures are attracting increasing attention for their physical, electronic, and frictional properties. SiS2, isoelectronic to SiO2, CO2 and CS2, is a material whose phases known experimentally up to 6 GPa exhibit 1D chain-like, 2D layered and 3D tetrahedral structures. We present highly predictive ab initio calculations combined with evolutionary structure search and molecular dynamics simulations of the structural and electronic evolution of SiS2 up to 100 GPa. A highly stable CdI2-type layered structure, which is octahedrally coordinated with space group surprisingly appears between 4 and up to at least 100 GPa. The tetrahedral-octahedral switch is naturally expected upon compression, unlike the layered character realized here by edge-sharing SiS6 octahedral units connecting within but not among sheets. The predicted phase is semiconducting with an indirect band gap of about 2 eV at 10 GPa, decreasing under pressure until metallization around 40 GPa. The robustness of the layered phase suggests possible recovery at ambient pressure, where calculated phonon spectra indicate dynamical stability. Even a single monolayer is found to be dynamically stable in isolation, suggesting that it could possibly be sheared or exfoliated from bulk -SiS2.

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“…65,104,211,377,403,489,552,703,704]. It is formed by high temperature reactions 'of silicon with sulfur [189,326,332,378,470,571,582,595,596,644,693]; silicon with hydrogen sulfide [595,596,597,685]; silicates and Si0 2 with CS 2 [326,327,[334][335][336][337]450, 685], sulfur [708], and a mixture of S2Cl2 with chlorine [191]; Si0 2 with hydrogen sulfide in the presence of charcoal [685]; lithium, calcium, copper, magnesium, and iron sUicides with sulfur [188,244,489,506,507]; SiO with S02 [736]; and sulfides of iron [141,293,576,738] and aluminum [192,193,420,421,423,636,642,[685][686]…”

Section: Chemical Propertiesmentioning

confidence: 99%

“…The reaction of silicon with sulfur at high temperature (-1300°C) and pressure forms another modification of Si~, in which the (SiS4,)4-tetrahedra, connected through the apices, form a three-dimensional lattice [566,644].…”

Section: Chemical Propertiesmentioning

confidence: 99%