High pressure solution growth of GaN

Madar, R.; Jacob, Guy; Hallais, J.; Fruchart, R.

doi:10.1016/0022-0248(75)90131-1

Cited by 127 publications

(42 citation statements)

References 21 publications

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“…In some cases, the wetting was so extreme that the entire melt left the well of the crucible and formed solid nitride on the upper surfaces of the crucible [11]. This "spreading-wetting" phenomenon is a striking feature of group III metal/nitrogen melts and has been observed in Ga/N and Al/N systems by several prior investigators [12][13][14][15]. In order to promote controlled, oriented nucleation of the solid nitride from the melt, we introduce a substrate.…”

Section: Introductionmentioning

confidence: 83%

Growth of Oriented Thick Films of Gallium Nitride from the Melt

Dyck

Kash

Grossner

et al. 1999

MRS Internet j. nitride semicond. res.

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While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report the growth of thick oriented GaN layers using the same technique by the introduction of (0001) sapphire into the melt to serve as a substrate. The mechanism of this growth is not established, but may involve transport of the metal as a liquid film onto the sapphire and subsequent reaction with atomic nitrogen. The films were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. X-ray diffraction showed that the GaN films were oriented with their c-axes parallel to the sapphire c-axis. The TEM analysis confirmed the orientation and revealed a dislocation density of approximately 10 10 cm -2 . The E 2 Raman active phonon modes were observed in the GaN films.

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Section: Introductionmentioning

confidence: 83%

Growth of Oriented Thick Films of Gallium Nitride from the Melt

Dyck

Kash

Grossner

et al. 1999

MRS Internet j. nitride semicond. res.

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“…GaN is able to be grown by different methods depending on certain purpose, like metalorganic chemical vapor deposition (MOCVD) [21], molecular beam epitaxy (MBE) [22], hydride vapor phase epitaxy (HVPE) [23]- [25], high pressure solution growth (HPS) [26], [27], so-dium (Na) flux [28], [29], and ammonothermal method [30]. These techniques (HPS, Na flux, ammonothermal method) is used for growing thick bulk GaN while MOCVD, MBE are often used in fabricating thin layers of GaN.…”

Section: Introductionmentioning

confidence: 99%

“…Due to high growth rate, HVPE is the primary choice for growth of thick bulk GaN that can be used as high quality native substrate. High pressure solution (HPS) [27] [26] Ammonothermal growth Na-flux [28], [29], [ Since there is a lack of native substrates of GaN, foreign substrates such as sapphire or SiC are used. Due to the difference in lattice parameters of the substrate and GaN, the dislocation density in the material is high (in the order of >10 9 cm -2 for a 1µm thick layer).…”

Section: Introductionmentioning

confidence: 99%

Investigation of deep levels in bulk GaN

Duc¹

2014

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The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska and Tietjen and since then, there has been an intensive development of the field, especially after the ground breaking discoveries concerning growth and p-type doping of GaN done by the 2014 year Nobel Laureates in Physics, Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. GaN and its alloys with In and Al belong to a semiconductor group which is referred as the III-nitrides. It has outstanding properties such as a direct wide bandgap (3.4 eV for GaN), high breakdown voltage and high electron mobility. With these properties, GaN is a promising material for a variety of applications in electronics and optoelectronics. The perhaps most important application is GaN-based light-emitting-diodes (LED) which can produce a highbrightness blue light. Since the bandgap of GaN can be controlled by alloying it with aluminium (Al) or indium (In) for a larger or smaller bandgap, respectively, GaN is very important for optoelectronic applications from infrared to the deep ultraviolet region. There are other semiconductors with bandgap similar to GaN such as SiC, and the first commercially blue light emitting LEDs where manufactured in SiC, however, SiC has an indirect bandgap with a low efficiency of emitting photons, and today, the SiC based LEDs have been completely replaced by the considerable more efficient GaN based LEDs. One problem, which has hampered the development of GaN based devices, is the lack of native substrate of GaN. Due to that, most of the GaN based devices are fabricated on foreign substrates such as SiC or Al2O3. Growing on a foreign substrate results in high threading dislocation (TD) densities (~109 cm-2) and stress in the GaN layer due to lattice mismatch and difference of thermal expansion coefficient between GaN and the substrate. The high TD density and the stress influence the performance of the devices. Another important aspect related to GaN which has attracted manystudies is how defects affect the efficiency of GaN-based devices.Therefore, it is necessary to understand the properties and to identifythem. When we know there properties, one can estimate how they willinfluence the behavior of devices, and thereby, optimize the performance of the device for its application. Basically, a fundamental knowledge of defect properties, and how to introduce them in a controlled manner, or to avoid them, is important in order to optimize the performance of devices. Defects can be introduced both intentionally and unintentionally into semiconductors during the growth process, during processing of the device or from the working environment, for example, devices working in a radioactive ambient are more likely to have defects induced by irradiation. This thesis is focused on electrical characterization of defects in bulk GaN grown by halide vapor phase epitaxy (HVPE) by using deep level transient spectroscopy. Other measurement techniques like currentvoltage measurement (IV), capacitance-voltage measurement (CV) a...

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“…Nowadays, there are many methods of growing GaN, like metalorganic chemical vapor deposition (MOCVD) [20], molecular beam epitaxy (MBE) [21], hydride vapor phase epitaxy [22]- [24], high pressure solution growth (HPS) [25], [26], sodium (Na) flux [27], [28], and ammonothermal method [29]. The following techniques such as HPS, Na flux, ammonothermal method are used for growing thick bulk GaN while MOCVD and MBE are often used in fabricating thin layers of GaN.…”

Section: Introductionmentioning

confidence: 99%

Electronic properties of intrinsic defects and impurities in GaN

Duc¹

2015

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High pressure solution growth of GaN

Cited by 127 publications

References 21 publications

Growth of Oriented Thick Films of Gallium Nitride from the Melt

Growth of Oriented Thick Films of Gallium Nitride from the Melt

Investigation of deep levels in bulk GaN

Electronic properties of intrinsic defects and impurities in GaN

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