High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties

Toledano-Luque, M.; Andrés, E. San; Prado, A. del; Mártil, I.; Lucı́a, M. L.; González-Dı́az, G.; Martínez, Francisco; Bohne, W.; Röhrich, J.; Strub, Erik

doi:10.1063/1.2769959

Cited by 35 publications

(23 citation statements)

References 32 publications

(33 reference statements)

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“…Therefore, it was decided to work at 0.50 mbar to have the maximum deposition rate and the minimal gas consumption of the system and, also, to avoid problems with plasma instabilities. Other works 23 that studied HPS of oxides showed that deposition rate decreased with pressure, and that 0.50 mbar presented the best compromise between efficient extraction and deposition rate, as these results confirm for metallic deposition.…”

Section: Resultssupporting

confidence: 70%

Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

Pampillón

Feijoo

Andrés

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Gadolinium oxide thin films were deposited on silicon by a two-step process: high pressure sputtering from a metallic gadolinium target followed by an in situ plasma oxidation. Several plasma conditions for metal deposition and oxidation were studied in order to minimize the growth of a SiO x layer at the interface between the high permittivity dielectric and the silicon substrate and to avoid substrate damage. Plasma emission was studied with glow discharge optical spectroscopy. The films were structurally characterized by Fourier transform infrared spectroscopy. Metal-insulator-semiconductor capacitors were fabricated with two different top metals (titanium and platinum) to analyze the influence of deposition conditions and the metal choice. Pt gated devices showed an interfacial SiO x regrowth after a forming gas annealing, while Ti gates scavenge the interface layer.

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Section: Resultssupporting

confidence: 70%

Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

Pampillón

Feijoo

Andrés

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…It must be noticed that SiO x thickness is low, compared, for instance, with TiO 2 that in similar conditions forms a ϳ6 nm interface 17 or HfO 2 that presents ϳ3 nm. 27 This indicates that ScO x might be more effective in blocking oxygen-radicals diffusion than TiO 2 or HfO 2 .…”

Section: Resultsmentioning

confidence: 99%

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Feijoo

Prado

Toledano-Luque

et al. 2010

Journal of Applied Physics

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Scandium oxide (ScOx) thin layers are deposited by high-pressure sputtering (HPS) for physical and electrical characterization. Different substrates are used for comparison of several ScOx/Si interfaces. These substrates are chemical silicon oxide (SiOx), H-terminated silicon surface and silicon nitride (SiNx), obtained by either electron-cyclotron-resonance chemical vapor deposition or plasma enhanced nitridation of the Si surface. Transmission electron microscopy images show that a 1.7 nm thick SiOx layer grows when ScOx is deposited on H-terminated silicon surface. We demonstrate that interfacial SiNx has some advantages over SiOx used in this work: its permittivity is higher and it presents better interface quality. It also avoids Si oxidation. An improvement of one order of magnitude in the minimum of interface trap density is found for SiNx with respect to the SiOx, reaching values below 2×1011 cm−2 eV−1. HPS deposited ScOx films are polycrystalline with no preferential growth direction for the used deposition conditions and their properties do not depend on the substrate. This material could be a candidate for high-k material in flash memory applications.

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“…It corresponds to transverse optical component of the asymmetric stretch of SiO 4 [30,31]. Neumayer et al observed a broad absorption band between 1200 and 810 cm −1 [30].…”

Section: Ftir Spectra Of Rf Sputtered Hfo 2 Filmsmentioning

confidence: 99%

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

Cantaş¹,

Aygün²,

Turan³

2014

Applied Surface Science

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a b s t r a c tHigh-hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and highfilm, prior to HfO 2 deposition, a thin Hf buffer layer was deposited on p-type (1 0 0) Si substrate at room temperature. Effect of oxygen gas quantity in the O 2 /Ar gas mixture was studied for the optical and structural properties of grown HfO 2 high-thin films. The grown thin oxide films were characterized optically using spectroscopic ellipsometer (SE) in detail. Crystal structure was studied by grazing incidence X-ray diffractometer (GIXRD) technique, while bonding structure was obtained by Fourier transform infrared spectroscopy (FTIR) analyses. In agreement with GIXRD and FTIR analyses, SE results show that any increment above ideal quantity of oxygen content in the gas mixture resulted in decrements in the refractive index and thickness of HfO 2 dielectric film, while increments in SiO 2 thickness. It is apparent from experimental results that oxygen to argon gas ratio needs to be smaller than 0.2 for a good film quality. The superior structural and optical properties for grown oxide film were obtained for O 2 /Ar gas ratio of about 0.05-0.1 combined with ∼30 W constant rf sputtering power.

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High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties

Cited by 35 publications

References 32 publications

Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

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