High-Pressure Hall Effect Measurement on Ta<sub>2</sub>NiSe<sub>5</sub> as a Candidate for Excitonic Insulator

Arima, Hironori; Naito, Yasushi; Kudo, Kazuki; Katayama, Naoyuki; Sawa, Hiroshi; Nohara, M.; Lu, Yangfan; Kitagawa, Kentaro; Takagi, H.; Uwatoko, Yoshiya; Matsubayashi, Kazuyuki

doi:10.7566/jpscp.30.011031

Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2019) 2020

DOI: 10.7566/jpscp.30.011031

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High-Pressure Hall Effect Measurement on Ta₂NiSe₅ as a Candidate for Excitonic Insulator

Hironori Arima

Yasushi Naito

Kazuki Kudo

et al.

Abstract: We report electrical resistivity and Hall measurement under high pressure on single crystals of Ta 2 NiSe 5 , which is a candidate material for excitonic insulator. Applying pressure causes a decrease in the magnitude of electrical resistivity and Hall coefficient, and the excitonic transition temperature T C shifts to lower accompanied by a reduction of an activation energy. These features are independent of the differece in the sample quality, indicating that they are intrinsic bulk properties of Ta 2 NiSe 5… Show more

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Room Temperature Thermoelectric Properties of Isostructural Selenides Ta₂PdS₆ and Ta₂PdSe₆

et al. 2021

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We have measured thermoelectric properties of Ta2PdX6 (X=S, Se) around room temperature using single crystal samples. We find that the power factor of Ta2PdX6 is relatively high from middle-low to room temperatures, and notably Ta2PdSe6 shows the largest power factor among thermoelectric materials with an electrical conductivity of 10 -2 Ωcm at 300 K. Ta2PdS6 will be a possible candidate for a Peltier cooling material if the lattice thermal conductivity is reduced by chemical substitution.Transition-metal chalcogenides have attracted much attention due to their unique physical properties arising from their low-dimensionality. Charge density wave 1) , superconductivity 2) , and topologically nontrivial electronic phases 3) in binary transition-metal dichalcogenides have been one of the central issues of the condensed matter physics. Ternary transition-metal chalcogenides with strong one-dimensionality (1D) also attract keen interests due to their exotic physical properties. For instance, a quasi 1D telluride Ta4SiTe4 and its sister compounds show good thermoelectric properties from middle-low to room temperatures 4)-6) . Another quasi 1D selenide Ta2NiSe5 is a candidate of the excitonic insulator (EI) 7)-9) , which has been pursued for long time from its theoretical prediction in the 1960s.Ta2PdX6 (X=S, Se), which was synthesized in 1985 10) , is yet another 1D ternary transitionmetal chalcogenide. This compound crystallizes in the monoclinic structure with the space

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Room Temperature Thermoelectric Properties of Isostructural Selenides Ta₂PdS₆ and Ta₂PdSe₆

et al. 2021

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Hybridization-Gap Formation and Superconductivity in the Pressure-Induced Semimetallic Phase of the Excitonic Insulator Ta₂NiSe₅

et al. 2021

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Destabilization of Excitonic Phase by Elemental Substitution in (Ta₁₋_xM_x)₂NiSe₅ (M = V, Nb) and Ta₂(Ni₁₋_yT_y)Se₅ (T = Fe, Co)

et al. 2023

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High-Pressure Hall Effect Measurement on Ta₂NiSe₅ as a Candidate for Excitonic Insulator

Cited by 3 publications

References 14 publications

Room Temperature Thermoelectric Properties of Isostructural Selenides Ta₂PdS₆ and Ta₂PdSe₆

Room Temperature Thermoelectric Properties of Isostructural Selenides Ta₂PdS₆ and Ta₂PdSe₆

Hybridization-Gap Formation and Superconductivity in the Pressure-Induced Semimetallic Phase of the Excitonic Insulator Ta₂NiSe₅

Destabilization of Excitonic Phase by Elemental Substitution in (Ta₁₋_xM_x)₂NiSe₅ (M = V, Nb) and Ta₂(Ni₁₋_yT_y)Se₅ (T = Fe, Co)

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High-Pressure Hall Effect Measurement on Ta2NiSe5 as a Candidate for Excitonic Insulator

Cited by 3 publications

References 14 publications

Room Temperature Thermoelectric Properties of Isostructural Selenides Ta2PdS6 and Ta2PdSe6

Room Temperature Thermoelectric Properties of Isostructural Selenides Ta2PdS6 and Ta2PdSe6

Hybridization-Gap Formation and Superconductivity in the Pressure-Induced Semimetallic Phase of the Excitonic Insulator Ta2NiSe5

Destabilization of Excitonic Phase by Elemental Substitution in (Ta1−xMx)2NiSe5 (M = V, Nb) and Ta2(Ni1−yTy)Se5 (T = Fe, Co)

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High-Pressure Hall Effect Measurement on Ta₂NiSe₅ as a Candidate for Excitonic Insulator

Room Temperature Thermoelectric Properties of Isostructural Selenides Ta₂PdS₆ and Ta₂PdSe₆

Room Temperature Thermoelectric Properties of Isostructural Selenides Ta₂PdS₆ and Ta₂PdSe₆

Hybridization-Gap Formation and Superconductivity in the Pressure-Induced Semimetallic Phase of the Excitonic Insulator Ta₂NiSe₅

Destabilization of Excitonic Phase by Elemental Substitution in (Ta₁₋_xM_x)₂NiSe₅ (M = V, Nb) and Ta₂(Ni₁₋_yT_y)Se₅ (T = Fe, Co)