We have measured thermoelectric properties of Ta2PdX6 (X=S, Se) around room temperature using single crystal samples. We find that the power factor of Ta2PdX6 is relatively high from middle-low to room temperatures, and notably Ta2PdSe6 shows the largest power factor among thermoelectric materials with an electrical conductivity of 10 -2 Ωcm at 300 K. Ta2PdS6 will be a possible candidate for a Peltier cooling material if the lattice thermal conductivity is reduced by chemical substitution.Transition-metal chalcogenides have attracted much attention due to their unique physical properties arising from their low-dimensionality. Charge density wave 1) , superconductivity 2) , and topologically nontrivial electronic phases 3) in binary transition-metal dichalcogenides have been one of the central issues of the condensed matter physics. Ternary transition-metal chalcogenides with strong one-dimensionality (1D) also attract keen interests due to their exotic physical properties. For instance, a quasi 1D telluride Ta4SiTe4 and its sister compounds show good thermoelectric properties from middle-low to room temperatures 4)-6) . Another quasi 1D selenide Ta2NiSe5 is a candidate of the excitonic insulator (EI) 7)-9) , which has been pursued for long time from its theoretical prediction in the 1960s.Ta2PdX6 (X=S, Se), which was synthesized in 1985 10) , is yet another 1D ternary transitionmetal chalcogenide. This compound crystallizes in the monoclinic structure with the space
A series of polycrystalline La 0.7 Sr 0.3 MnO 3 (LSMO) films was deposited by sputtering on Ba 0.4 Sr 0.6 TiO 3 (BSTO)/YSZ (Yttria stabilized Zirconia) buffered Si substrates. Through changing the deposition temperature and thickness of the buffer layers, the LSMO films with grain sizes from about 10 nm to 100 nm were prepared. The results of transport properties of these polycrystalline LSMO films show that the MR value (which is the value after deducting the CMR part) strongly depends on the film resistivities. We also developed a dual path model which includes both the spin dependent tunneling and scattering to explain the low-field MR effect of LSMO polycrystalline films. And the experimental results can fit well with our dual path model.
Epitaxial thin films of Bi 1-x Ba x FeO 3 have been deposited by sputtering on LaAlO 3 and SrTiO 3 substrates with and without conducting buffer layers of paramagnetic LaNiO 3 and ferromagnetic La 0.7 Sr 0.3 MnO 3 , and their structural, magnetic and ferroelectric properties have been investigated. It has been shown from magnetic and ferroelectric characterization that Bi 1-x Ba x FeO 3 epitaxial films in a thickness of 300 nm exhibited reasonable multiferroic properties at room temperature. Spin-filter junctions consisting of a La 0.7 Sr 0.3 MnO 3 / Bi 1-x Ba x FeO 3 /LaNiO 3 epitaxial heterostructure have been fabricated using photolithography and ion milling. The junctions with a Bi 1-x Ba x FeO 3 layer thickness of 4 nm exhibited nonlinear current-voltage (I-V) characteristics with the barrier height of 0.37 eV, and MR effect at 4.2 K, indicating that the Bi 1-x Ba x FeO 3 ultrathin layers serves as ferromagnetic tunnel barriers in spin-filter junctions.
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