High-power spectrally-stable DBR semiconductor lasers designed for pulsing in the nanosecond regime

O'Daniel, Jason K.; Achtenhagen, M.

doi:10.1117/12.848064

Cited by 8 publications

(5 citation statements)

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“…Spectral stabilization can be realized with Bragg gratings integrated into the semiconductor chip as in distributed feedback (DFB) lasers or in distributed Bragg reflector (DBR) lasers. With gain-switched RW lasers the generation of optical pulses in the ns range with peak powers of more than 1 W has been demonstrated by several groups [1][2][3]. DBR RW lasers emitting at 976 nm and 1064 nm were reported in [2] to generate optical pulses with pulse lengths between 4 ns and 48 ns.…”

Section: Introductionmentioning

confidence: 97%

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

Klehr

Wenzel

Fricke

et al. 2015

Novel in-Plane Semiconductor Lasers XIV

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Semiconductor based sources which emit high-power spectrally stable nearly diffraction-limited optical pulses in the nanosecond range are ideally suited for a lot of applications, such as free-space communications, metrology, material processing, seed lasers for fiber or solid state lasers, spectroscopy, LIDAR and frequency doubling.Detailed experimental investigations of 975 nm and 800 nm diode lasers based on master oscillator power amplifier (MOPA) light sources are presented. The MOPA systems consist of distributed Bragg reflector lasers (DBR) as master oscillators driven by a constant current and ridge waveguide power amplifiers which can be driven DC and by current pulses.In pulse regime the amplifiers modulated with rectangular current pulses of about 5 ns width and a repetition frequency of 200 kHz act as optical gates, converting the continuous wave (CW) input beam emitted by the DBR lasers into a train of short optical pulses which are amplified. With these experimental MOPA arrangements no relaxation oscillations in the pulse power occur. With a seed power of about 5 mW at a wavelength of 973 nm output powers behind the amplifier of about 1 W under DC injection and 4 W under pulsed operation, corresponding to amplification factors of 200 (amplifier gain 23 dB) and 800 (gain 29 dB) respectively, are reached. At 800 nm a CW power of 1 W is obtained for a seed power of 40 mW. The optical spectra of the emission of the amplifiers exhibit a single peak at a constant wavelength with a line width < 10 pm in the whole investigated current ranges. The ratios between laser and ASE levels were > 50 dB. The output beams are nearly diffraction limited with beam propagation ratios M 2 lat ~ 1.1 and M 2 ver ~ 1.2 up to 4 W pulse power.

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Section: Introductionmentioning

confidence: 97%

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

Klehr

Wenzel

Fricke

et al. 2015

Novel in-Plane Semiconductor Lasers XIV

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“…Q-and gain-switching with pulsed current drivers are often applied for optical pulse generation [5][6][7]. For display applications passive pulse generation techniques such as passive mode-locking (ML) are applicable since the timing stability of the pulse train is of minor importance.…”

Section: Introductionmentioning

confidence: 99%

Integrated 13 GHz ps-pulse-source at 1064 nm

Brox¹,

Prziwarka²,

Klehr³

et al. 2013

Semicond. Sci. Technol.

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We present an integrated pulse source at 1064 nm and discuss design, fabrication and measurement results of the 3.5 mm long ridge-waveguide distributed Bragg reflector laser. The optical pulses with a peak power of 0.9 W, a temporal duration of 12.4 ps and a repetition frequency of 13 GHz are generated by passive mode-locking and are well suited for seeding master oscillator power amplifier systems for efficient green light generation with nonlinear frequency doubling in single pass configuration.

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“…Lasers with Bragg gratings integrated into the chip can be realised either in a distributed Bragg reflector (DBR) or in a distributed feedback (DFB) configuration. DBR ridge-waveguide lasers emitting at 976 and 1064 nm were reported in [2] to generate optical pulses with pulse lengths between 4 and 48 ns. Stable pulses with a maximum peak power of 600 mW were obtained.…”

mentioning

confidence: 99%

High peak-power nanosecond pulses generated with DFB RW laser

et al. 2011

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The generation of optical pulses with very high-peak power by gainswitching of a distributed-feedback (DFB) ridge-waveguide (RW) laser emitting at a wavelength of 1064 nm is demonstrated. With 4 ns-long pulses a peak power of 2.6 W is achieved at a repetition frequency of 250 kHz. The rise and fall times of the pulses are about 1.2 ns. The spectral full width at half maximum ranges between 30 and 40 pm for all powers, whereas the width enclosing 95% of the intensity increases from 90 to 450 pm from low to high power. The laser has a cavity length of 1 mm.Introduction: High-power diode lasers capable of generating spectrally stable nearly diffraction-limited optical pulses in the nanosecond range can be used in a variety of applications including free-space communications, metrology, material processing and frequency doubling. Gain switching, i.e. turning on and off the current injected into the active section of a diode laser, offers a simple, cost-effective and powerefficient possibility to generate optical pulses. Diffraction-limited emission is achieved by a proper design of the laser waveguide, so that only the fundamental transverse mode lases. Spectral stabilisation can be realised with Bragg gratings either in an external cavity configuration or integrated into the semiconductor chip. Both methods have their advantages and disadvantages. For example, internal Bragg gratings necessitate a more sophisticated chip technology. On the other hand, lasers with external Bragg gratings suffer from the long external round-trip time, such that during the onset of the pulse the spectral stabilisation fails. In [1] a slab-coupled optical waveguide laser emitting at 965 nm is reported, which is spectrally stabilised with an external fibre Bragg grating. A fibre-coupled power of 1.6 W (2.4 W emitted by the laser) was obtained with 35 ns-long pulses. The spectral full width at half maximum (FWHM) was 0.2 nm. A cavity as long as 5 mm was used. Lasers with Bragg gratings integrated into the chip can be realised either in a distributed Bragg reflector (DBR) or in a distributed feedback (DFB) configuration. DBR ridge-waveguide lasers emitting at 976 and 1064 nm were reported in [2] to generate optical pulses with pulse lengths between 4 and 48 ns. Stable pulses with a maximum peak power of 600 mW were obtained. In [3], a 1.8 mmlong DFB ridge-waveguide laser emitting at 976 nm having lateral Bragg gratings was used to generate 50 ns-long optical pulses with a peak power of 1.6 W. In this Letter, we demonstrate the generation of 4 ns-long optical pulses with a peak power of about 2.6 W at a repetition frequency of 250 kHz with a 1 mm-long DFB laser emitting at 1064 nm.

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High-power spectrally-stable DBR semiconductor lasers designed for pulsing in the nanosecond regime

Cited by 8 publications

References 0 publications

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

Integrated 13 GHz ps-pulse-source at 1064 nm

High peak-power nanosecond pulses generated with DFB RW laser

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